파트넘버.co.kr BD826 데이터시트 PDF


BD826 반도체 회로 부품 판매점

PNP power transistors



Philips 로고
Philips
BD826 데이터시트, 핀배열, 회로
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D067
BD826; BD828; BD830
PNP power transistors
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Jun 23

BD826 데이터시트, 핀배열, 회로
Philips Semiconductors
PNP power transistors
Product specification
BD826; BD828; BD830
FEATURES
• High current (max. 1 A)
• Low voltage (max. 80 V).
APPLICATIONS
• General purpose
• Driver stages in hi-fi amplifiers and television circuits.
DESCRIPTION
PNP power transistor in a TO-202; SOT128B plastic
package. NPN complements: BD825 and BD829.
PINNING
PIN
1
2
3
handbook, halfpage
DESCRIPTION
emitter
collector, connected to metal part of
mounting surface
base
2
3
1
12 3
MAM304
Fig.1 Simplified outline (TO-202; SOT128B)
and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCBO
collector-base voltage
BD826
BD828
BD830
VCEO
collector-emitter voltage
BD826
BD828
BD830
ICM peak collector current
Ptot total power dissipation
hFE DC current gain
fT transition frequency
CONDITIONS
open emitter
open base
Tamb ≤ 25 °C
Tmb ≤ 50 °C
IC = −150 mA; VCE = −2 V
IC = −50 mA; VCE = −5 V; f = 100 MHz
MIN. TYP. MAX. UNIT
− − −45 V
− − −60 V
− − −100 V
− − −45 V
− − −60 V
− − −80 V
− − −1.5 A
−−2W
−−8W
40 −
250
− 75 − MHz
1997 Jun 23
2



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BD826 transistor

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