파트넘버.co.kr BD168 데이터시트 PDF


BD168 반도체 회로 부품 판매점

PNP PLASTIC POWER TRANSISTORS



CDIL 로고
CDIL
BD168 데이터시트, 핀배열, 회로
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
TO-126 (SOT-32) Plastic Package
BD166, BD168, BD170
BD166, 168, 170 PNP PLASTIC POWER TRANSISTORS
Complementary BD165, 167, 169
Audio Amplifier and Driver Circuit Applications
PIN CONFIGURATION
1. EMITTER
2. COLLECTOR
3. BASE
1
2
3
ALL DIMENSIONS IN MM
ABSOLUTE MAXIMUM RATINGS
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current
Total power dissipation up to TC = 25°C
Junction temperature
Collector-emitter saturation voltage
IC = 0.5 A; IB = 0.05 A
D.C. current gain
IC = 0.15 A; VCE = 2 V
VCBO
VCEO
IC
Ptot
Tj
166
max. 45
max. 45
max.
max.
max.
168 170
60 80
60 80
1.5
20
150
V
V
A
W
°C
VCEsat max.
0.5
V
hFE min.
40
RATINGS (at TA=25°C unless otherwise specified)
Limiting values
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
VCBO
VCEO
VEBO
166 168 170
max. 45 60 80
max. 45 60 80
max.
5.0
V
V
V
Continental Device India Limited
Data Sheet
Page 1 of 3


BD168 데이터시트, 핀배열, 회로
BD166, BD168, BD170
Collector current
IC
Base current
IB
Total power dissipation up to TA = 25°C Ptot
Derate above 25°C
Total power dissipation up to TC = 25°C Ptot
Derate above 25°C
Junction temperature
Storage temperature
Tj
Tstg
THERMAL RESISTANCE
From junction to case
From junction to ambient
Rth jc
Rth ja
CHARACTERISTICS
Tamb = 25°C unless otherwise specified
Collector cutoff current
IE = 0; VCB = 45 V
IE = 0; VCB = 60 V
IE = 0; VCB = 80 V
Emitter cut-off current
IC = 0; VEB = 5 V
Breakdown voltages
IC = 0.1 A; IB = 0
IC = 1 mA; IE = 0
IE = 1 mA; IC = 0
Saturation voltage
IC = 0.5 A; IB = 0.05 A
Base-emitter on voltage
IC = 0.5 A; VCE = 2 V
D.C. curent gain
IC = 0.15 A; VCE = 2 V
IC = 0.5 A; VCE = 2 V
Transition frequency f = 1 MHz
IC = 500 mA; VCE = 2V
ICBO
ICBO
ICBO
IEBO
VCEO(sus)*
VCBO
VEBO
VCEsat*
VBE(on)*
hFE*
hFE*
fT
* Pulse test: pulse width 300 µs; duty cycle 2%.
max.
max.
max.
max
max.
max
max.
1.5
0.5
1.25
10
20
160
150
–65 to +150
A
A
W
mW/°C
W
mW/°C
°C
ºC
6.25 °C/W
100 °C/W
166 168 170
max. 0.1 – – mA
max. – 0.1 – mA
max. – – 0.1 mA
max.
1.0
mA
min. 45 60 80 V
min. 45 60 80 V
min. 5.0 V
max.
0.5
V
max.
0.95
V
min.
min.
40
15
min. 6.0 MHz
Continental Device India Limited
Data Sheet
Page 2 of 3




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BD168 transistor

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