BUZ31H 반도체 회로 부품 판매점
Power-Transistor
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 Infineon |
SIPMOS ® Power Transistor
BUZ 31 H
• N channel
• Enhancement mode
• Avalanche-rated
• Normal Level
. Pb-free lead plating; RoHs compliant
. Halogen-free according to IEC61249-2-21
Type
BUZ 31 H
VDS
200 V
ID
14.5 A
RDS(on)
0.2 Ω
Maximum Ratings
Parameter
Continuous drain current
TC = 30 ˚C
Pulsed drain current
TC = 25 ˚C
Avalanche current,limited by Tjmax
Avalanche energy,periodic limited by Tjmax
Avalanche energy, single pulse
ID = 14.5 A, VDD = 50 V, RGS = 25 Ω
L = 1.42 mH, Tj = 25 ˚C
Gate source voltage
ESD-Sensitivity HBM as per MIL-STD 883
Power dissipation
TC = 25 ˚C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Pin 1
G
Pin 2
D
Package
PG-TO-220-3
Pb-free
Yes
Pin 3
S
Symbol
ID
IDpuls
IAR
EAR
EAS
VGS
Ptot
Tj
Tstg
RthJC
RthJA
Values
14.5
58
13.5
9
Unit
A
mJ
200
± 20
Class 1
95
-55 ... + 150
-55 ... + 150
≤ 1.32
75
E
55 / 150 / 56
V
W
˚C
K/W
Rev. 2.5
Page 1
2009-11-09
BUZ 31 H
Electrical Characteristics, at Tj = 25˚C, unless otherwise specified
Parameter
Symbol
min.
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C
Gate threshold voltage
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
VDS = 200 V, VGS = 0 V, Tj = 25 ˚C
VDS = 200 V, VGS = 0 V, Tj = 125 ˚C
Gate-source leakage current
VGS = 20 V, VDS = 0 V
Drain-Source on-resistance
VGS = 5 V, ID = 9 A
V(BR)DSS
200
VGS(th)
2.1
IDSS
-
-
IGSS
-
RDS(on)
-
Values
typ.
max.
--
34
0.1 1
10 100
10 100
0.16 0.2
Unit
V
µA
nA
Ω
Rev. 2.5
Page 2
2009-11-09
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제조업체: Infineon
( infineon )
BUZ31H transistor
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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전력반도체 문의 : 010-3582-2743
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