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Inchange Semiconductor |
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BD635
DESCRIPTION
·DC Current Gain -
: hFE = 40(Min.)@ IC= 25mA
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min.)
·Complement to Type BD636
APPLICATIONS
·Designed for amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60 V
VCEO
Collector-Emitter Voltage
60 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous
2A
ICM Collector Current-Peak
5A
IBB Base Current-Continuous
Collector Power Dissipation
@ Ta=25℃
PC
Collector Power Dissipation
@ TC=25℃
TJ Junction Temperature
Tstg Storage Temperature Range
0.3 A
2
W
30
150 ℃
-55~150
℃
isc Website:www.iscsemi.cn
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BD635
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 0.1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB=B 0.1A
VBE(on) Base-Emitter On Voltage
IC= 1A; VCE= 2V
ICES Collector Cutoff Current
VCE= 60V; VBE= 0
hFE-1
DC Current Gain
IC= 25mA; VCE= 2V
hFE-2
DC Current Gain
IC= 1A; VCE= 2V
MIN MAX UNIT
60 V
60 V
5V
0.6 V
1.3 V
0.2 mA
40
25
isc Website:www.iscsemi.cn
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