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Inchange Semiconductor |
Inchange Semiconductor
Silicon NPN Power Transistors
DESCRIPTION
With TO-126 package
Complement to type BD234 /236 /238
APPLICATIONS
For medium power linear and
switching applications
PINNING
PIN
DESCRIPTION
1 Emitter
2
Collector;connected to
mounting base
3 Base
Product Specification
BD233 BD235 BD237
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
BD233
VCBO
Collector-base voltage BD235
BD237
BD233
VCEO
Collector-emitter voltage BD235
BD237
VEBO
Emitter -base voltage
IC Collector current (DC)
ICM Collector current-Peak
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
45
60
100
45
60
80
5
2
6
25
150
-65~150
UNIT
V
V
V
A
A
W
Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BD233 BD235 BD237
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=1A; IB=0.1A
VBE Base-emitter on voltage
IC=1A ; VCE=2V
VCEO(SUS)
Collector-emitter
sustaining voltage
BD233
BD235 IC=0.1A; IB=0
BD237
BD233 VCB=45V; IE=0
ICBO Collector cut-off current BD235 VCB=60V; IE=0
BD237 VCB=100V; IE=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=150mA ; VCE=2V
hFE-2
DC current gain
IC=1A ; VCE=2V
fT Transition frequency
IC=250mA; VCE=10V
MIN TYP. MAX UNIT
0.6 V
1.3 V
45
60 V
80
100 A
1 mA
40
25
3 MHz
2
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