BD233 반도체 회로 부품 판매점
NPN Plastic-Encapsulate Transistors
|
|
 MCC |
MCC
TM
Micro Commercial Components
omponents
20736 Marilla Street Chatsworth
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$
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BD233
BD235
BD237
Features
• Power Dissipation: PCM =1.25W, Ta=25ć
• Collector Current : IC=2A
• Complement to BD234/236/238 respectively
• Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates
RoHS Compliant. See ordering information)
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
• Marking: Type Number
Maximum Ratings*
Symbol
Rating
Rating
Unit
VCEO
Collector-Emitter Voltage
BD233
BD235
BD237
45
60
80
V
VCBO
Collector-Base Voltage
BD233
BD235
BD237
45
60
100
V
VCER
Collector-Emitter Voltage
BD233
BD235
BD237
45
60
100
V
VEBO
IC
ICP
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
5V
2A
6A
PC Collector Dissipation ( TC=25ć)
TJ Operating Junction Temperature
TSTG
Storage Temperature
25
150
-65 to +150
W
ć
ć
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min Max Units
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
VCEO(sus)
BD233 (IC=0.1Adc, IB=0)
BD235 (IC=0.1Adc, IB=0)
BD237 (IC=0.1Adc, IB=0)
Collector Cutoff Current
ICBO
BD233 (VCB=45Vdc, IE=0)
BD235 (VCB=60Vdc, IE=0)
BD237 (VCB=100Vdc, IE=0)
IEBO
Emitter Cutoff Current
(VBE=5.0Vdc, IC=0)
DC Current Gain
hFE (VCE=2V, IC=150mA)
(VCE=2V, IC=1A)
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=1A, IB=0.1A)
VBE(on)
Base-Emitter ON Voltage
(VCE=2V, IC=1A)
fT
Current Gain Bandwidth Product
(VCE=10V, IC=0.25A)
*Pulse Test: PW=300µs, Duty Cycle=1.5% Pulsed
45 ---
60 ---
80 ---
V
V
V
--- 100 µA
--- 100 µA
--- 100 µA
--- 1.0 mA
40 ---
25 ---
--- 0.6 V
--- 1.3 V
3 --- MHz
Notes: 1. High Temperature Solder Exemption Applied, see EU Directive Annex Notes 7.
NPN
Plastic-Encapsulate
Transistors
AK
N
D
E
B
1 23
L
G
M
C
FQ
L
M
N
Q
J
PIN 1.
EMITTER
PIN 2.
COLLECTOR
PIN 3.
BASE
DIMENSIONS
0.291
0.417
0.307
0.433
0.602
4
0.118
0.618
1
0.126
0.026
0.034
0.046
0.054
0.090TYP
0.098
0.114
0.083
0.091
0.000
0.043
0.012
0.059
0.018
0.024
7.40
7.80
10.60
11.00
15.30
3.90
15.70
4.10
3.00 3.20
0.66 0.86
1.17 1.37
2.290TYP
2.50 2.90
2.10 2.30
0.00
1.10
0.30
1.50
0.45 0.60
Revision: A
www.mccsemi.com
1 of 3
2011/01/01
BD233/235/237
1000
100
VCE = 2V
10
1
0.01
0.1
1
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
10
10
IC MAX. (Pulsed)
IC MAX. (Continuous)
1
DC
10µs
0.1
1
10 100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Safe Operating Area
MCC
TM
Micro Commercial Components
10
IC = 10 IB
1 VBE(sat)
VCE(sat)
0.1
0.01
0.1
1
IC[A], COLLECTOR CURRENT
10
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
40
35
30
25
20
15
10
5
0
0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Figure 4. Power Derating
Revision: A
www.mccsemi.com
2 of 3
2011/01/01
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제조업체: MCC
( mcc )
BD233 transistor
데이터시트 다운로드 :
[ BD233.PDF ]
[ BD233 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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