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Inchange Semiconductor |
INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
BD550
DESCRIPTION
·High Power Dissipation
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 110V(Min)
APPLICATIONS
·Designed for use as either driver or output unit applications
in audio amplifier circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MAX
UNIT
VCBO
VCER
VCEO
Collector-Base Voltage
Collector-Emitter Voltage
RBE= 100Ω
Collector-Emitter Voltage
130 V
130 V
110 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous
7A
IBB Base Current-Continuous
Collector Power Dissipation
PC @TC=25℃
Tj Junction Temperature
Tstg Storage Temperature Range
2A
150 W
200 ℃
-65~200 ℃
isc Website:www.iscsemi.cn
INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
BD550
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A ; IB= 0
VCER(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A ; RBE= 100Ω
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB=B 0.5A
VBE(on) Base-Emitter On Voltage
IC= 4A ;VCE= 4V
ICER Collector Cutoff Current
VCE= 110V; RBE= 100Ω
ICEO Collector Cutoff Current
VCE= 95V; IB=B 0
IEBO Emitter Cutoff Current
VEB= 5V; IC= 0
hFE DC Current Gain
IC= 4A ; VCE= 4V
fT Current Gain-Bandwidth Product IC= 0.2A ; VCE= 10V
MIN TYP. MAX UNIT
110 V
130 V
2V
1.75 V
1 mA
5 mA
1 mA
15 75
5 MHz
isc Website:www.iscsemi.cn
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