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Inchange Semiconductor |
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC4001
DESCRIPTION
·The 2SC4001is designed for uses of high-resolution monitor
TV applications.This makes it possible to raise the video band
Of high-resolution monitor TVs to 50MHz.
FEATURES
·Collector–Emitter Sustaining Voltage-
: VCBO = 300 V(Min)
·Complement to Type 2SA1546
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
300 V
VCEO
Collector-Emitter Voltage
250 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous
PC
Collector Power Dissipation
TC=25℃
Ti Junction Temperature
Tstg Storage Temperature Range
0.1
7
150
-55~150
A
W
℃
℃
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC4001
ELECTRICAL CHARACTERISTICS
TC =25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
ICBO Collector Cutoff Current
VCB= 200V; IE= 0
IEBO Emitter Cutoff Current
VEB= 3V; IC= 0
hFE DC Current Gain
IC= 10m A ; VCE=10V
VCE(sat) Collector-Emitter Saturation Voltage IC= 10mA ;IB=1mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 10mA ;IB= 1mA
fT Current-Gain—Bandwidth Product IE= 30mA ; VCE= 30V
COB Output Capacitance
IE= 0 ; VCB= 30V;ftest= 1.0MHz
MIN MAX UNIT
100 nA
100 nA
60 300
0.3 V
1.2 V
200 MHz
3.5 pF
hFE Classifications
ML
K
60-120 100-200 160-300
isc website:www.iscsemi.com
2 isc & iscsemi is registered trademark
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