파트넘버.co.kr KTD1824 데이터시트 PDF


KTD1824 반도체 회로 부품 판매점

EPITAXIAL PLANAR NPN TRANSISTOR



KEC 로고
KEC
KTD1824 데이터시트, 핀배열, 회로
SEMICONDUCTOR
TECHNICAL DATA
FOR LOW-FREQUENCY AMPLIFICATION.
FEATURES
High foward current transfer ratio hFE.
Low collector to emitter saturation voltage VCE(sat).
High emitter to base voltage VEBO.
Low noise voltage NV.
USM type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
MAXIMUM RATINGS (Ta=25)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Collector Power Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Storage Temperature Range
Tstg
RATING
50
40
15
50
100
100
150
-55150
UNIT
V
V
V
mA
mW
KTD1824
EPITAXIAL PLANAR NPN TRANSISTOR
E
MB M
2
1
NK
DIM MILLIMETERS
DA
B
2.00+_ 0.20
1.25 +_ 0.15
3
C 0.90 +_ 0.10
D 0.3+0.10/-0.05
E 2.10 +_ 0.20
G 0.65
H 0.15+0.1/-0.06
J 1.30
K 0.00-0.10
L
HM
0.70
0.42+_ 0.10
N 0.10 MIN
N
1. EMITTER
2. BASE
3. COLLECTOR
USM
Marking
L
Type Name
hFE Rank
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
ICBO
ICEO
V(BR)CBO
V(BR)CEO
V(BR)EBO
hFE (Note)
VCE(sat)
VCB=20V, IE=0
VCE=20V, IB=0
IC=10A, IE=0
IC=1mA, IB=0
IE=10A, IC=0
VCE=10V, IC=2mA
IC=10mA, IB=1mA
Transition Frequency
Note : hFE Classification
fT VCB=10V, IE=-2mA, f=200MHz
A:400~800, B:600~1200, C:1000~2000
MIN.
-
-
50
40
15
400
-
-
TYP.
-
-
1000
0.05
120
MAX.
100
1
2000
0.2
-
UNIT
nA
A
V
V
V
V
MHz
2001. 11. 29
Revision No : 1
1/3


KTD1824 데이터시트, 핀배열, 회로
KTD1824
120
Ta=25 C
100
80
60
40
20
I C - V CE
100µA
90µA
80µA
70µA
60µA
50µA
40µA
30µA
20µA
I B =10µA
0
0 2 4 6 8 10
COLLECTOR-EMITTER VOLTAGE VCE (V)
1200
VCE =10V
900
600
300
h FE - I C
Ta=75 C
Ta=25 C
Ta=-25 C
0
0.1 0.3
1
3 10 30 100
COLLECTOR CURRENT IC (mA)
1 IC /I B=10
0.5
0.3
VCE(sat) - I C
0.1
0.05
0.03
Ta=75 C
Ta=25 C
Ta=-25 C
0.01
0.1
0.3 1
3 10
30
COLLECTOR CURRENT IC (mA)
100
100
VCE =10V
80
60
I C - VBE
40
20
0
0 0.2 0.4 0.6 0.8 1.0 1.2
BASE-EMITTER VOLTAGE VBE (V)
250
VCB =10V
Ta=25 C
200
fT - IE
150
100
50
0
-0.1
-0.3 -1
-3 -10 -30
EMITTER CURRENT IE (mA)
-100
2001. 11. 29
Revision No : 1
C ob - VCB
8
IE =0
7 f=1MHz
Ta=25 C
6
5
4
3
2
1
0
1 3 10 30 100
COLLECTOR-BASE VOLTAGE VCB (V)
2/3




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KTD1824 transistor

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