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Inchange Semiconductor |
isc Silicon PNP Power Transistor
INCHANGE Semiconductor
3CA753
DESCRIPTION
·Low VCE(sat)
·Small and slim package
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Power dissipation
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-40 V
VCEO
Collector-Emitter Voltage
-30 V
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current-Continuous -2 A
PC Collector Power Dissipation
1.2 W
TJ Junction Temperature
150 ℃
Tstg Storage Temperature Range
-55~150
℃
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon PNP Power Transistor
INCHANGE Semiconductor
3CA753
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -2A; IB= -200mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -1.5A; IB= -30mA
V(BR)CBO Collector-Base Breakdown Voltage IC= -100uA; IB= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -1mA; IC= 0
ICBO Collector Cutoff Current
VCB= -40V; IE= 0
IEBO Emitter Cutoff Current
VEB= -5V; IC= 0
hFE DC Current Gain
IC= -0.5A; VCE= -2V
COB Output Capacitance
IE= 0; VCB= -10V; f= 1.0MHz
fT Current-Gain—Bandwidth Product IC= -500mA; VCE= -5V
MIN TYP. MAX UNIT
-0.8 V
-2.0 V
-40 V
-30 V
-5 V
-0.1 μA
-0.1 μA
100 400
13 pF
120 MHz
hFE Classifications
O YG
100-200 160-320 200-400
isc website:www.iscsemi.com
2 isc & iscsemi is registered trademark
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