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Infineon |
SiC- JFET
Silicon Carbide- Junction Field Effect Transistor
CoolSiC™
1200 V CoolSiC™ Power Transistor
IJW120R100T1
Final Datasheet
Rev. 2.0, <2013-09-11>
Power Management & Multimarket
1200 V Silicon Carbide JFET
Description
CoolSiC™ is Infineon’s new family of active power switches based on
silicon carbide. Combining the excellent material properties of silicon
carbide with our normally-on JFET concept allows the next steps towards
higher performance paired with very high ruggedness. The extremely low
switching and conduction losses make applications even more efficient,
compact, lighter and cooler.
IJW120R100T1
Features
Ultra fast switching
Internal fast body diode
Low intrinsic capacitance
Low gate charge
175 °C maximum operating temperature
Gate
Drain
Source
Drain
Pin 2
Gate
Pin 1
Benefits
Enabling higher system efficiency and/ or higher output power in same housing
Enabling higher frequency / increased power density solutions
System cost / space savings due to reduced cooling requirements
Higher system reliability due to enlarged junction temperatures rates
Reduced EMI
Source
Pin 3
Applications
Solar Inverters
High voltage DC/ DC or AC/ DC conversion
Bidirectional Inverter
Compliant for applications according to climate class IEC 60721-3-4 (4K4H)
Table 1
Key Performance Parameters
Parameter
Value
Unit
VDS
RDS(on) max
QG, typ
ID, pulse
Eoss @ 800 V
1200
100
72
78
28
V
mΩ
nC
A
µJ
Table 2
Pin 1
Gate
Pin Definition
Pin 2
Pin 3
Drain
Source
Type / ordering Code
IJW120R100T1 1)
Package
PG-TO247-3
Marking
120R100T1
Related links
www.infineon.com/CoolSiC
1) J-STD20 and JESD22
Final Datasheet
2
Rev. 2.0, <2013-09-11>
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