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Inchange Semiconductor |
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BDY71
DESCRIPTION
·Continuous Collector Current-IC= 4A
·Collector Power Dissipation-
: PC= 29W @TC= 25℃
APPLICATIONS
·Designed for general purpose switching and amplifier
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
90 V
VCEX
Collector-Emitter Voltage VBE= -1.5V
90 V
VCER
Collector-Emitter Voltage RBE= 100Ω
60
V
VCEO
Collector-Emitter Voltage
55 V
VEBO
Emitter-Base Voltage
7V
IC Collector Current-Continuous
4A
IBB Base Current-Continuous
2A
PC Collector Power Dissipation@TC=25℃ 29
W
TJ Junction Temperature
200 ℃
Tstg Storage Temperature
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX
6.0
UNIT
℃/W
isc Website:www.iscsemi.cn
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BDY71
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0
VCER(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; RBE= 100Ω
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA
VBE(on) Base-Emitter On Voltage
IC= 0.5A; VCE= 4V
ICEO Collector Cutoff Current
ICEV Collector Cutoff Current
IEBO Emitter Cutoff Current
VCE= 30V; IB=B 0
VCE= 90V; VBE(off)= 1.5V
VCE= 30V; VBE(off)= 1.5V,TC=150℃
VEB= 7V; IC= 0
hFE DC Current Gain
IC= 0.5A ; VCE= 4V
fT Current Gain-Bandwidth Product IC= 0.2A; VCE= 10V
MIN MAX UNIT
55 V
60 V
7V
1.0 V
1.7 V
0.5 mA
1.0
5.0
mA
1.0 mA
80 200
0.8 MHz
isc Website:www.iscsemi.cn
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