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Inchange Semiconductor |
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
BDX33D
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 120V(Min)
·High DC Current Gain
: hFE= 750(Min) @IC= 3A
·Low Collector Saturation Voltage
: VCE(sat)= 2.5V(Max.)@ IC= 3A
·Complement to Type BDX34D
APPLICATIONS
·Designed for general purpose amplifier and low speed
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
120 V
VCEO
Collector-Emitter Voltage
120 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous
10 A
ICM Collector Current-Peak
15 A
IB Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ Junction Temperature
0.25 A
70 W
150 ℃
Tstg Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.78 ℃/W
isc website: www.iscsemi.com
1 isc & iscsemi is registered trademark
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
BDX33D
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 6mA
VBE(on) Base-Emitter On Voltage
IC= 3A; VCE= 3V
ICBO Collector Cutoff Current
VCB= 120V; IE= 0
ICEO Collector Cutoff Current
VCE= 60V; IB= 0
IEBO Emitter Cutoff Current
VEB= 5V; IC= 0
hFE DC Current Gain
IC= 3A; VCE= 3V
120 V
2.5 V
2.5 V
0.2 mA
0.5 mA
10 mA
750
isc website: www.iscsemi.com
2 isc & iscsemi is registered trademark
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