|
Inchange Semiconductor |
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BDT91F/93F/95F
DESCRIPTION
·DC Current Gain- hFE= 20~200@ IC= 4A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 60V(Min)- BDT91F; 80V(Min)- BDT93F;
100V(Min)- BDT95F
·Complement to Type BDT92F/94F/96F
APPLICATIONS
·Designed for use in audio output stages and general
amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BDT91F
60
VCBO
Collector-Base Voltage BDT93F
80
V
BDT95F
100
BDT91F
60
VCEO
Collector-Emitter Voltage BDT93F
80
V
BDT95F
100
VEBO
Emitter-Base Voltage
7V
IC Collector Current-Continuous
10 A
ICM Collector Current-Peak
20 A
IB Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ Junction Temperature
4A
32 W
150 ℃
Tstg Storage Temperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
6.4 ℃/W
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BDT91F/93F/95F
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
BDT91F
BDT93F IC= 30mA ; IB= 0
BDT95F
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 3.3A
VBE(on) Base-Emitter On Voltage
ICBO Collector Cutoff Current
ICEO Collector Cutoff Current
IC= 4A; VCE= 4V
VCB= VCBOmax; IE= 0
VCB=1/2VCBOmax; IE= 0,TJ=150℃
VCE= VCEOmax V; IB= 0
IEBO Emitter Cutoff Current
VEB= 7V; IC= 0
hFE-1
DC Current Gain
IC= 4A ; VCE= 4V
hFE-2
DC Current Gain
IC= 10A ; VCE= 4V
fT Current-Gain—Bandwidth Product
Switching times
ton Turn-On Time
toff Turn-Off Time
IC= 500mA ; VCE= 10V
IC= 4A; IB1= -IB2= 0.4A
MIN TYP. MAX UNIT
60
80 V
100
1V
3V
1.6 V
0.1
5
mA
1 mA
1 mA
20 200
5
4 MHz
0.5 1 μs
2 4 μs
isc website:www.iscsemi.com
2 isc & iscsemi is registered trademark
|