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BDS19 반도체 회로 부품 판매점

Silicon PNP Power Transistor



Inchange Semiconductor 로고
Inchange Semiconductor
BDS19 데이터시트, 핀배열, 회로
NCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
BDS19
DESCRIPTION
·High Voltage: VCEV= -150V(Min)
·Low Saturation Voltage-
: VCE(sat)= -1.5V(Max)@ IC= -4A
·High Reliablity
APPLICATIONS
·Designed for power linear and switching application and
General puepose power.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
-150
VCEO
Collector-Emitter Voltage
-150
VEBO
Emitter-Base Voltage
-5
IC Collector Current-Continuous
-8
IB Base Current
PC
Collector Power Dissipation
@ TC=25
TJ Junction Temperature
-2
50
200
Tstg Storage Temperature Range
-65~200
UNIT
V
V
V
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
2.5 /W
Rth j-a Thermal Resistance, Junction to Ambient 62.5 /W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark


BDS19 데이터시트, 핀배열, 회로
NCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
BDS19
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA ;IB= 0
-150
V
VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A
-1.5 V
VBE(on) Base-Emitter On Voltage
ICBO Collector Cutoff Current
IC= -1A ; VCE= 2V
VCE= -150V; VBE= 0
-1.0 V
-0.02 mA
ICEO Collector Cutoff Current
VCE= -75V; VBE= 0
-0.1 mA
IEBO Emitter Cutoff Current
VEB= -5V; IC=0
-0.01 mA
hFE-1
DC Current Gain
IC= -0.5A; VCE= -2V
40 250
hFE-2
DC Current Gain
IC=-4A; VCE= -2V
15 150
fT Current-Gain—Bandwidth Product IC= -0.5A ; VCE= -10V
30
MHz
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark




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