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Inchange Semiconductor |
NCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
BDS19
DESCRIPTION
·High Voltage: VCEV= -150V(Min)
·Low Saturation Voltage-
: VCE(sat)= -1.5V(Max)@ IC= -4A
·High Reliablity
APPLICATIONS
·Designed for power linear and switching application and
General puepose power.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
-150
VCEO
Collector-Emitter Voltage
-150
VEBO
Emitter-Base Voltage
-5
IC Collector Current-Continuous
-8
IB Base Current
PC
Collector Power Dissipation
@ TC=25℃
TJ Junction Temperature
-2
50
200
Tstg Storage Temperature Range
-65~200
UNIT
V
V
V
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
2.5 ℃/W
Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
NCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
BDS19
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA ;IB= 0
-150
V
VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A
-1.5 V
VBE(on) Base-Emitter On Voltage
ICBO Collector Cutoff Current
IC= -1A ; VCE= 2V
VCE= -150V; VBE= 0
-1.0 V
-0.02 mA
ICEO Collector Cutoff Current
VCE= -75V; VBE= 0
-0.1 mA
IEBO Emitter Cutoff Current
VEB= -5V; IC=0
-0.01 mA
hFE-1
DC Current Gain
IC= -0.5A; VCE= -2V
40 250
hFE-2
DC Current Gain
IC=-4A; VCE= -2V
15 150
fT Current-Gain—Bandwidth Product IC= -0.5A ; VCE= -10V
30
MHz
isc website:www.iscsemi.com
2 isc & iscsemi is registered trademark
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