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Inchange Semiconductor |
NCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BDS12
DESCRIPTION
·High Voltage: VCEV= 100V(Min)
·Low Saturation Voltage-
: VCE(sat)= 1.0V(Max)@ IC= 5A
·High Reliablity
APPLICATIONS
·Designed for power linear and switching application and
General puepose power.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
100
VCEV
Collector-Emitter Voltage
100
VCEO
Collector-Emitter Voltage
100
VEBO
Emitter-Base Voltage
5
IC Collector Current-Continuous
15
IB Base Current
PC
Collector Power Dissipation
@ TC=25℃
TJ Junction Temperature
5
90
150
Tstg Storage Temperature Range
-65~150
UNIT
V
V
V
V
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
1.4 ℃/W
Rth j-a
Thermal Resistance, Junction to Ambient
80 ℃/W
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
NCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BDS12
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0
100 V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A
1.0 V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 2.5A
3.0 V
VBE(sat) Base-Emitter Saturation Voltage
IC= 10A; IB= 2.5A
2.5 V
ICBO Collector Cutoff Current
VCE= 100V; VBE= 0
0.5 mA
ICEO Collector Cutoff Current
VCE= 50V; VBE= 0
1.0 mA
IEBO Emitter Cutoff Current
VEB= 5V; IC=0
1.0 mA
hFE-1
DC Current Gain
IC= 0.5A; VCE= 4V
40 250
hFE-2
DC Current Gain
IC= 5A; VCE= 4V
15 150
hFE-3
DC Current Gain
IC= 10A; VCE= 4V
5
fT Current-Gain—Bandwidth Product IC= 0.5A ; VCE= 4V
3 MHz
isc website:www.iscsemi.com
2 isc & iscsemi is registered trademark
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