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BDS12 반도체 회로 부품 판매점

Silicon NPN Power Transistor



Inchange Semiconductor 로고
Inchange Semiconductor
BDS12 데이터시트, 핀배열, 회로
NCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BDS12
DESCRIPTION
·High Voltage: VCEV= 100V(Min)
·Low Saturation Voltage-
: VCE(sat)= 1.0V(Max)@ IC= 5A
·High Reliablity
APPLICATIONS
·Designed for power linear and switching application and
General puepose power.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
100
VCEV
Collector-Emitter Voltage
100
VCEO
Collector-Emitter Voltage
100
VEBO
Emitter-Base Voltage
5
IC Collector Current-Continuous
15
IB Base Current
PC
Collector Power Dissipation
@ TC=25
TJ Junction Temperature
5
90
150
Tstg Storage Temperature Range
-65~150
UNIT
V
V
V
V
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
1.4 /W
Rth j-a
Thermal Resistance, Junction to Ambient
80 /W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark


BDS12 데이터시트, 핀배열, 회로
NCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BDS12
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0
100 V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A
1.0 V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 2.5A
3.0 V
VBE(sat) Base-Emitter Saturation Voltage
IC= 10A; IB= 2.5A
2.5 V
ICBO Collector Cutoff Current
VCE= 100V; VBE= 0
0.5 mA
ICEO Collector Cutoff Current
VCE= 50V; VBE= 0
1.0 mA
IEBO Emitter Cutoff Current
VEB= 5V; IC=0
1.0 mA
hFE-1
DC Current Gain
IC= 0.5A; VCE= 4V
40 250
hFE-2
DC Current Gain
IC= 5A; VCE= 4V
15 150
hFE-3
DC Current Gain
IC= 10A; VCE= 4V
5
fT Current-Gain—Bandwidth Product IC= 0.5A ; VCE= 4V
3 MHz
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark




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BDS12 transistor

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