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Inchange Semiconductor |
INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
BD678AG
DESCRIPTION
·Collector–Emitter Breakdown Voltage—
: V(BR)CEO = -60V
·DC Current Gain—
: hFE = 750(Min) @ IC= -2 A
·Complement to Type BD677A
·G=Pb-Free Package
APPLICATIONS
·Designed for use as output devices in complementary
general-purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-60 V
VCEO
Collector-Emitter Voltage
-60 V
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current-Continuous
-4 A
IB Base Current
PC
Collector Power Dissipation
TC=25℃
Ti Junction Temperature
Tstg Storage Temperature Range
-0.1
40
-55~150
-55~150
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case 3.13 ℃/W
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
BD678AG
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -40mA
VBE(on) Base-Emitter On Voltage
IC= -2A; VCE= -3V
ICEO Collector Cutoff Current
ICBO Collector Cutoff Current
IEBO Emitter Cutoff Current
VCE= -30V; IB= 0
VCB= -60V; IE= 0
VCB= -60V; IE= 0;TC= 100℃
VEB= -5V; IC= 0
hFE DC Current Gain
IC= -2 A ; VCE= -3V
MIN MAX UNIT
-60 V
-2.8 V
-2.5 V
-0.5 mA
-0.2
-2.0
mA
-2.0 mA
750
isc website:www.iscsemi.com
2 isc & iscsemi is registered trademark
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