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BD546C 반도체 회로 부품 판매점

Silicon PNP Power Transistor



Inchange Semiconductor 로고
Inchange Semiconductor
BD546C 데이터시트, 핀배열, 회로
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
DESCRIPTION
·Collector Current -IC= -15A
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = -40V(Min)- BD546; -60V(Min)- BD546A
-80V(Min)- BD546B; -100V(Min)- BD546C
·Complement to Type BD545/A/B/C
APPLICATIONS
·Designed for use in general purpose power amplifier and
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
BD546
-40
VCBO
Collector-Base Voltage
BD546A
BD546B
-60
-80
V
BD546C -100
BD546
-40
VCEO
Collector-Emitter
Voltage
BD546A
BD546B
-60
-80
V
BD546C -100
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current-Continuous
Collector Power Dissipation
PC
@ Ta=25
Collector Power Dissipation
@ TC=25
TJ Junction Temperature
Tstg Storage Temperature Range
-15
3.5
85
150
-65~150
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1.47 /W
Rth j-c Thermal Resistance,Junction to Ambient 35.7 /W
isc Product Specification
BD546/A/B/C
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark


BD546C 데이터시트, 핀배열, 회로
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
BD546/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BD546
V(BR)CEO
Collector-Emitter
Breakdown Voltage
BD546A
BD546B
IC= -30mA ;IB=0
BD546C
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -5A; IB= -0.625A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A; IB= -2A
VBE(on) Base-Emitter On Voltage
IC= -10A; VCE= -4V
BD546
VCE= -40V; VBE= 0
ICES
Collector
Cutoff Current
BD546A
BD546B
VCE= -60V; VBE= 0
VCE= -80V; VBE= 0
BD546C
VCE= -100V; VBE= 0
ICEO
Collector
Cutoff Current
BD546/A
VCE= -30V; IB= 0
BD546B/C VCE= -60V; IB= 0
IEBO Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -1A; VCE= -4V
hFE-2
DC Current Gain
IC= -5A; VCE= -4V
hFE-3
DC Current Gain
IC= -10A; VCE= -4V
Switching times
ton Turn-on Time
toff Turn-off Time
IC= -6A; IB1= -IB2= -0.6A;
RL= 5Ω; VBE(off)= 4V
MIN TYP. MAX UNIT
-40
-60
V
-80
-100
-0.8 V
-1.0 V
-1.8 V
-0.4 mA
-0.7 mA
-1.0 mA
60
25
10
0.4 μs
0.7 μs
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark




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BD546C transistor

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