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Inchange Semiconductor |
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
KTA1659A
DESCRIPTION
·High Collector-Emitter Breakdown Voltage
VCEO= -180V(Min)
·Complement to Type KTC4370A
APPLICATIONS
·Designed for high voltage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-180
V
VCEO
Collector-Emitter Voltage
-180
V
VEBO
Emitter-Base Voltage
-5.0 V
IC(DC)
Collector Current(DC)
-1.5 A
IB(DC)
PC
TJ
Base Current
Collector Power Dissipation
@TC=25℃
Junction Temperature
Tstg Storage Temperature
-0.15
A
20 W
150 ℃
-55~150 ℃
isc website: www.iscsemi.com
1 isc & iscsemi is registered trademark
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
KTA1659A
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA
VBE(on) Base-Emitter On Voltage
IC= -500mA; VCE= -5V
ICBO Collector Cutoff Current
VCB= -180V; IE= 0
IEBO Emitter Cutoff Current
VEB= -5V; IC= 0
hFE DC Current Gain
IC= -100mA; VCE= -5V
COB Output Capacitance
IE=0; VCB= -10V; f= 1.0MHz
fT
Current-Gain—Bandwidth Product
IC=-100mA; VCE= -10V
MIN TYP. MAX UNIT
-180
V
-1.5 V
-1.0 V
-1.0 μA
-1.0 μA
70 240
30 pF
100 MHz
hFE Classifications
OY
70-140 120-240
isc website: www.iscsemi.com
2 isc & iscsemi is registered trademark
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