BDX33 반도체 회로 부품 판매점
Darlington Transistors
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 Multicomp |
BDX33, 34
Darlington Transistors
Features:
• Collector-Emitter sustaining voltage-
VCEO(sus) = 80V (Minimum) - BDX33B, BDX34B
= 100V (Minimum) - BDX33C, BDX34C
• Monolithic construction with Built-in Base-Emitter shunt resistor.
Pin 1. Base
2. Collector
3. Emitter
4. Collector(Case)
Dimensions Minimum Maximum
A
14.68
15.31
B 9.78 10.42
C 5.01 6.52
D
13.06
14.62
E 3.57 4.07
F 2.42 3.66
G 1.12 1.36
H 0.72 0.96
I 4.22 4.98
J 1.14 1.38
K 2.20 2.97
L 0.33 0.55
M 2.48 2.98
O 3.70 3.90
Dimensions : Millimetres
NPN
BDX33B
BDX33C
PNP
BDX34B
BDX34C
10 Ampere
Complementary Silicon
Power Transistors
80 - 100 Volts
70 Watts
TO-220
Page 1
31/05/05 V1.0
BDX33, 34
Darlington Transistors
MAXIMUM RATINGS
Characteristic
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
-Peak
Base Current
Total Power Dissipation at TC = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
ICM
IB
PD
TJ, TSTG
BDX33B
BDX34B
BDX33C
BDX34C
80 100
5.0
10
15
0.25
70
0.56
-65 to +150
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance Junction to Case
Symbol
Rθjc
Maximum
1.78
Unit
°C/W
Figure - 1 Power Derating
Unit
V
A
W
W/°C
°C
Page 2
31/05/05 V1.0
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제조업체: Multicomp
( multicomp )
BDX33 transistor
데이터시트 다운로드 :
[ BDX33.PDF ]
[ BDX33 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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