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Multicomp |
TIP107
Power Darlington Transistors
Feature:
• PNP Plastic Power Darlington Transistors for Linear and Switching
Applications.
TO-220 Plastic Package
Pin Configuration:
1. Base
2. Collector
3. Emitter
4. Collector
Dimensions Minimum Maximum
A
14.42
16.51
B 9.63 10.67
C 3.56 4.83
D - 0.90
E 1.15 1.40
F 3.75 3.88
G 2.29 2.79
H 2.54 3.43
J - 0.56
K
12.70
14.73
L 2.80 4.07
M 2.03 2.92
N - 31.24
O 7°
Dimensions : Millimetres
Page 1
11/05/08 V1.1
TIP107
Power Darlington Transistors
Absolute Maximum Ratings
Parameters
Symbol
-
Collector-Base Voltage (Open Emitter)
VCBO
Collector Emitter Voltage (Open Base)
VCEO
Collector Current
IC
Total Power Dissipation upto TC = 25°C
Ptot
Junction Temperature
Tj
Collector-Emittert Saturation Voltage
IC = 3A, IB = 6mA
DC Current Gain
IC = 3A; VCE = 4V
VCE (sat)
hFE
Ratings (at Tamb = 25°C unless otherwise specified)
Collector-Base Voltage (Open Emitter)
Collector Emitter Voltage (Open Base)
Emitter-Base Voltage (Open Collector)
Collector Current
Collector Peak Current
Base Current
Total Power Dissipation upto TC = 25°C
Derate above 25°C
Total Power Dissipation upto TA = 25°C
Derate above 25°C
VCBO
VCEO
VEBO
IC
ICM
IB
Ptot
Junction Temperature
Storage Temperature
Tj
Tstg
Thermal Resistance
From Junction to Ambient
Rth (j-a)
From Junction to Case
Rth (j-c)
Maximum
Minimum
Maximum
Maximum
-
-
Characteristics (Tamb = 25°C unless otherwise specified)
Collector Cut off Current
IB = 0; VCE = 50V
IE = 0; VCB = 100V
Emitter Cut off Current
IC = 0; VEB = 5V
ICEO
ICBO
IEBO
Maximum
Breakdown Voltages
IC = 30mA; IB = 0
IC = 1mA; IE = 0
IE = 1mA; IC = 0
VCEO (sus)*
VCBO
VEBO
Minimum
TIP107
100
8.0
80
150
2.0
1.0
20
100
5.0
8.0
15
1.0
80
0.64
2.0
0.016
150
-65 to +150
62.5
1.56
50
50
8
100
100
5.0
Unit
V
A
W
°C
V
-
V
A
W
W/°C
°C
°C/W
µA
mA
V
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11/05/08 V1.1
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