파트넘버.co.kr BDX53B 데이터시트 PDF


BDX53B 반도체 회로 부품 판매점

SILICON POWER DARLINGTON TRANSISTORS



Comset Semiconductors 로고
Comset Semiconductors
BDX53B 데이터시트, 핀배열, 회로
NPN BDX53 – BDX53A – BDX53B – BDX53C
SILICON POWER DARLINGTON TRANSISTORS
The BDX53, BDX53A, BDX53B and BDX53C are silicon epitaxial-base NPN transistors in
monolithic Darlington configuration and are mounted in Jedec TO-220 plastic package.
They are intented for use in audio amplifiers, medium power linear and switching applications.
The complementary PNP types are the BDX54, BDX54A, BDX54B and BDX54C respectively.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
Collector-Emitter Voltage IB=0
VCBO
VEBO
IC
IB
PT
TJ
TS
Collector-Base Voltage IE=0
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
IC=0
IC(RMS)
ICM
@ TC = 25°
Value
BDX53
BDX53A
BDX53B
BDX53C
BDX53
BDX53A
BDX53B
BDX53C
45
60
80
100
45
60
80
100
5
8
12
0.2
60
150
-65 to +150
Unit
V
V
V
A
A
W
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-C
Thermal Resistance, Junction to Case
Value
2.08
Unit
°C/W
10/12/2012
COMSET SEMICONDUCTORS
1/3


BDX53B 데이터시트, 핀배열, 회로
NPN BDX53 – BDX53A – BDX53B – BDX53C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
BDX53
45 -
-
VCEO(SUS)
Collector-Emitter
Breakdown Voltage (*)
IC=100 mA
IB = 0
BDX53A
BDX53B
60
80
-
-
-
-
V
BDX53C 100 -
-
VCB=22V, IB = 0
BDX53
--
ICEO
Collector Cutoff Current
VCB=30V, IB = 0
VCB=40V, IB = 0
BDX53A
BDX53B
-
-
-
-
0.5 mA
VCB=50V, IB = 0
BDX53C -
-
BDX53
IEBO
Emitter Cutoff Current
VBE=5 V
BDX53A
BDX53B
-
-
2 mA
BDX53C
VCBO=45 V, IE = 0 BDX53
--
ICBO
Collector-Base Cutoff
Current
VCBO=60 V, IE = 0
VCBO=80 V, IE = 0
BDX53A
BDX53B
-
-
-
-
0.2 mA
VCBO=100 V, IE = 0 BDX53C
-
-
BDX53
VCE(SAT)
Collector-Emitter
saturation Voltage (*)
IC=3 A, IB=12 mA
BDX53A
BDX53B
-
-
2
BDX53C
BDX53
V
VBE(SAT)
Base-Emitter saturation
Voltage (*)
IC=3 A, IB=12 mA
BDX53A
BDX53B
-
- 2.5
BDX53C
BDX53
IF=3 A
BDX53A
BDX53B
-
- 4.0 V
VF
Forward Voltage (pulse
method)
IF=8 A
BDX53C
BDX53
BDX53A
BDX53B
BDX53C
-
-
1.8 2.5
2.5 -
V
BDX53
hFE
DC Current Gain (*)
VCE=3 V, IC=3 A
BDX53A
BDX53B
750
-
-
-
BDX53C
(*) Pulse Width 300 µs, Duty Cycle 1.5%
10/12/2012
COMSET SEMICONDUCTORS
2/3




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BDX53B transistor

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