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Comset Semiconductor |
NPN BD241 – A – B – C
MEDIUM POWER LINEAR AND SWITCHING
APPLICATIONS.
The BD241, A, B, C are the NPN transistors mounted in Jedec TO-220 plastic package.
They are the silicon epitaxial-base Power Transistors for use in medium power linear and
switching applications.
The PNP complements are BD242, A, B, C.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
VCER
VEBO
IC
IB
PT
TJ
TS
Collector-Emitter Voltage (IB = 0)
Collector-Emitter Voltage (RBE = 100 Ω)
Emitter-Base Voltage (IC = 0)
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
IC
ICM
@ Tamb = 25° C
@ Tcase = 25° C
BD241
BD241A
BD241B
BD241C
BD241
BD241A
BD241B
BD241C
BD241
BD241A
BD241B
BD241C
Value
45
60
80
100
55
70
90
115
5.0
3
5
1
2
40
150
-65 to +150
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-amb
RthJ-case
Thermal Resistance, Junction-ambient
Thermal Resistance, Junction-case
Value
62.5
3.13
Unit
V
V
V
A
A
W
W
°C
Unit
°C/W
°C/W
23/10/2012
COMSET SEMICONDUCTORS
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NPN BD241 – A – B – C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
VCE=30 V
BD241
ICEO
Collector Cutoff Current
VCE=30 V
VCE=60 V
BD241A
BD241B
VCE=60 V
BD241C
BD241
IEBO Emitter Cutoff Current
VBE=5 V
BD241A
BD241B
BD241C
VCE=55 V
BD241
ICES
Collector Cutoff Current
(VBE = 0)
VCE=70 V
VCE=90 V
BD241A
BD241B
VCE=115 V
BD241C
BD241
VCEO(sus)
Collector-Emitter
Voltage (IB = 0) (*)
Sustaining
IC =30mA
BD241A
BD241B
BD241C
BD241
VCE=4 V, IC=1 A
BD241A
BD241B
hFE DC Current Gain (*)
BD241C
BD241
VCE=4 V, IC=3 A
BD241A
BD241B
BD241C
VCE(SAT)
Collector-Emitter saturation
Voltage (*)
BD241
IC=3 A, IB=0.6 A
BD241A
BD241B
BD241C
BD241
VBE(on)
Base-Emitter Voltage (*)
VCE=4 V, IC=3 A
BD241A
BD241B
BD241C
BD241
VCE=10 V
IC=0.5 A
f = 1KHz
BD241A
BD241B
hfe
Small Signal Current Gain
VCE=10 V
IC=0.5 A
f = 1MHz
BD241C
BD241
BD241A
BD241B
BD241C
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
Min Typ Max Unit
--
-
-
-
-
0.3 mA
--
--
-
-
-
-
1.0 mA
--
--
-
-
-
-
0.2 mA
--
45
60
80
V
100
25 -
-
-
10 -
-
- - 1.2 V
- - 1.8 V
20 - -
3- - -
23/10/2012
COMSET SEMICONDUCTORS
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