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PDF BD239C Data sheet ( Hoja de datos )
| Número de pieza | BD239C | |
| Descripción | NPN SILICON POWER TRANSISTOR | |
| Fabricantes | DRIX SEMICONDUCTOR | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BD239C (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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NPN SILICON POWER TRANSISTOR BD239C
30 W at 25ºC Case Temperature
2A Continuous Collector Current
4A Peak Collector Current
100V Collector-Emitter Voltage
Isolated transistor package available
on request
Custom selections possible
Absolute maximum ratings at 25ºC case temperature (unless otherwise noted)
RATING
Collector-Base Voltage (Ie=0)
SYMBOL
VCBO
VALUE
100
UNIT
V
Collector-Emitter Voltage (Ib=0)
VCEO
100 V
Emitter-base voltage (reverse)
Continuous collector current
Peak collector current (max 300µs, duty cycle 2%)
Continuous base current
Continuous device dissipation at max 25ºC case temperature (see note 1)
Continuous device dissipation at max 25ºC free air temperature (see note 2)
Unclamped inductive load energy (see note 3)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
VEBO
IC
ICM
IB
P tot
P tot
½LIC2
Tj
T stg
TL
5
2
4
0.6
30
2
22
-65 to
+150
-65 to
+150
250
V
A
A
A
W
W
mJ
ºC
ºC
ºC
NOTES
1. Derate linearly to 150ºC case temperature at the rate of 0.24 W/ºC. This rating is not applicable to isolated packages.
2. Derate linearly to 150ºC free air temperature at the rate of 16 mW/ºC
3. This rating is based on the capability of the transistor to operate safely in a circuit of: L=20 mH, IB(on)=30mA,
RBE = 270 ohm, VBE(off) = 0, RS = 0.1 ohm, ICC = 1A., duty max 1%.
DRIX SEMICONDUCTOR DATASHEET
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet BD239C.PDF ] | |
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