|
SEMTECH |
BD909 / BD911
NPN Complementary Silicon Power Transistors
TO-220 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Base Currentt
Total Power Dissipation @ TC ≤ 25 OC
Operating Junction Temperature Range
Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Symbol
VCBO
VCEO
VEBO
IC
IB
Ptot
TJ
TJ, Ts
RθJC
Value
BD909
BD911
80 100
80 100
5
15
5
90
150
-65 to +150
1.4
Unit
V
V
V
A
A
W
OC
OC
OC/W
SEMTECH ELECTRONICS LTD.
®
Dated : 17/09/2016 Rev: 01
BD909 / BD911
Characteristics at TC = 25 OC
Parameter
DC Current Gain
at VCE = 4 V, IC = 0.5 A
at VCE = 4 V, IC = 5 A
at VCE = 4 V, IC = 10 A
Collector Emitter Sustaining Voltage
at IC = 100 mA
Collector Cutoff Current
at VCB = 80 V
at VCB = 100 V
Collector Cutoff Current
at VCE = 40 V
at VCE = 50 V
Emitter Cutoff Current
at VEB = 5 V
Collector Emitter Saturation Voltage
at IC = 5 A, IB = 0.5 A
at IC = 10 A, IB = 2.5 A
Base Emitter Saturation Voltage
at IC = 10 A, IB = 2.5 A
Base Emitter Voltage
at IC = 5 A, VCE = 4 V
Transition Frequecy
at VCE = 4 V, IC = 0.5 A,
BD909
BD911
BD909
BD911
BD909
BD911
Symbol
hFE
hFE
hFE
VCEO(sus)
ICBO
ICBO
ICEO
ICEO
IEBO
VCE(sat)
VCE(sat)
VBE(sat)
VBE
fT
Min.
40
15
5
80
100
-
-
-
-
-
-
-
-
-
3
Max.
250
150
-
-
-
0.5
0.5
1
1
1
Unit
-
-
-
V
mA
mA
mA
mA
mA
1V
3V
2.5 V
1.5 V
- MHz
SEMTECH ELECTRONICS LTD.
®
Dated : 17/09/2016 Rev: 01
|