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SEMICONDUCTOR
BD911(NPN)
BD912(PNP) RRooHHSS
Nell High Power Products
Complementary Silicon Power Transistors
(15A / 100V / 90W)
FEATURES
Designed for general-purpose switching
and amplifier applications.
DC current gain specified to 10A
High current gain-Band width product:
fT = 3 MHz (Min.) @ lC = 0.5 Adc
Excellent safe operating area
DESCRIPTION
The BD911 is a silicon epitaxial-base planar NPN
transistor in TO-220AB package.
lt is intended for use in general-purpose amplifier
and switding applications.
The complementary PNP type is BD912.
12 3
TO-220AB
INTERNAL SCHEMATIC DIAGRAM
C (2)
(1)
B
(3)
E
BD911(NPN)
C (2)
(1)
B
(3)
E
BD912(PNP)
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
VCBO
Collector to base voltage (IE = 0)
VCEO
Collector to emitter voltage (IB = 0)
VEBO
Emitter to base voltage (IC = 0)
IC Collector current
IB Base current
Total power dissipation
PC
Derate above 25ºC
TC= 25°C
Tj Junction temperature
Tstg Storage temperature
*For PNP types voltage and current values are negative.
VALUE
100
100
5.0
15
5
90
0.72
150
-55 to 150
UNIT
V
A
W
W/ºC
ºC
THERMAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
Rth(j-c)
Maximum thermal resistance, junction to case
VALUE
1.40
UNIT
ºC/W
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SEMICONDUCTOR
BD911(NPN)
BD912(PNP) RRooHHSS
Nell High Power Products
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
OFF CHARACTERISTICS
ICEO
Collector cutoff current
VCE = 50V, lB = 0
ICBO
Collector cutoff current
VCB = 100V, lE = 0
VCB = 100V, lE = 0, TC = 150°C
IEBO
Emitter cutoff current
VEB = 5V, lC = 0
VCEO(SUS)* Collector to emitter sustaining voltage
lC = 100mA, lB = 0
V(BR)CBO Collector to base breakdown voltage
lE = 0, lC = 100mA
V(BR)EBO Emitter to base breakdown voltage
lC = 0, lE = 100mA
ON CHARACTERISTICS
lC = 0.5A, VCE = 4V
hFE Forward current transfer ratio (DC current gain) lC = 5A, VCE = 4V
lC = 10A, VCE = 4V
VCE(sat)* Collector to emitter saturation voltage
VBE(sat)*
VBE*
Base to emitter saturation voltage
Base to emitter voltage
lC = 5A, lB = 500mA
lC = 10A, lB = 2.5A
lC = 10A, lB = 2.5A
IC = 5A, VCE = 4V
DYNAMIC CHARACTERISTICS
Transition frequency (Current gain- Bandwidth
fT product )
lC = 0.5A, VCE = 4V, f = 1MHz
*Pulsed : Pulse duration = 300 µs, duty cycle ≤ 20%.
*For PNP types voltage and current values are negative.
MIN MAX
1.0
0.5
5.0
1.0
100
100
5
mA
V
40 250
15 150
5
1.0
3.0
2.5
1.5
V
3.0 MHZ
Fig.1 Active region safe operating area
20
10
5.0
2.0
1.0
0.5
0.2
0.1
2
10 ms
DC
1 ms 100 us
10 us
Second Breakdown limited
Bonding Wire limited
Thermally Limited
TC = 25°C(Single Pulse)
5 10 20
50
100
200
Collector-emitter voltage, VCE (V)
There are two limitations on the power handling
ability of a transistor: average junction temperature
and second breakdown. Safe operating area curves
indicate lC-VCE limits of the transistor that must be
observed for reliable operation; i.e., the transistor
must not be subjected to greater dissipation than the
curves indicate.
The data of figure 1 is based on TJ(pk) =150°C. TC is
variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided
TJ(pk) ≤ 150°C. At high case temperatures, thermal
limitations wil l reduce the power that can be handled
to values less than the limitations imposed by second
breakdown.
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