파트넘버.co.kr BD911 데이터시트 PDF


BD911 반도체 회로 부품 판매점

Complementary Silicon Power Transistors



nELL 로고
nELL
BD911 데이터시트, 핀배열, 회로
SEMICONDUCTOR
BD911(NPN)
BD912(PNP) RRooHHSS
Nell High Power Products
Complementary Silicon Power Transistors
(15A / 100V / 90W)
FEATURES
Designed for general-purpose switching
and amplifier applications.
DC current gain specified to 10A
High current gain-Band width product:
fT = 3 MHz (Min.) @ lC = 0.5 Adc
Excellent safe operating area
DESCRIPTION
The BD911 is a silicon epitaxial-base planar NPN
transistor in TO-220AB package.
lt is intended for use in general-purpose amplifier
and switding applications.
The complementary PNP type is BD912.
12 3
TO-220AB
INTERNAL SCHEMATIC DIAGRAM
C (2)
(1)
B
(3)
E
BD911(NPN)
C (2)
(1)
B
(3)
E
BD912(PNP)
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
VCBO
Collector to base voltage (IE = 0)
VCEO
Collector to emitter voltage (IB = 0)
VEBO
Emitter to base voltage (IC = 0)
IC Collector current
IB Base current
Total power dissipation
PC
Derate above 25ºC
TC= 25°C
Tj Junction temperature
Tstg Storage temperature
*For PNP types voltage and current values are negative.
VALUE
100
100
5.0
15
5
90
0.72
150
-55 to 150
UNIT
V
A
W
W/ºC
ºC
THERMAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
Rth(j-c)
Maximum thermal resistance, junction to case
VALUE
1.40
UNIT
ºC/W
www.nellsemi.com
Page 1 of 4


BD911 데이터시트, 핀배열, 회로
SEMICONDUCTOR
BD911(NPN)
BD912(PNP) RRooHHSS
Nell High Power Products
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
OFF CHARACTERISTICS
ICEO
Collector cutoff current
VCE = 50V, lB = 0
ICBO
Collector cutoff current
VCB = 100V, lE = 0
VCB = 100V, lE = 0, TC = 150°C
IEBO
Emitter cutoff current
VEB = 5V, lC = 0
VCEO(SUS)* Collector to emitter sustaining voltage
lC = 100mA, lB = 0
V(BR)CBO Collector to base breakdown voltage
lE = 0, lC = 100mA
V(BR)EBO Emitter to base breakdown voltage
lC = 0, lE = 100mA
ON CHARACTERISTICS
lC = 0.5A, VCE = 4V
hFE Forward current transfer ratio (DC current gain) lC = 5A, VCE = 4V
lC = 10A, VCE = 4V
VCE(sat)* Collector to emitter saturation voltage
VBE(sat)*
VBE*
Base to emitter saturation voltage
Base to emitter voltage
lC = 5A, lB = 500mA
lC = 10A, lB = 2.5A
lC = 10A, lB = 2.5A
IC = 5A, VCE = 4V
DYNAMIC CHARACTERISTICS
Transition frequency (Current gain- Bandwidth
fT product )
lC = 0.5A, VCE = 4V, f = 1MHz
*Pulsed : Pulse duration = 300 µs, duty cycle 20%.
*For PNP types voltage and current values are negative.
MIN MAX
1.0
0.5
5.0
1.0
100
100
5
mA
V
40 250
15 150
5
1.0
3.0
2.5
1.5
V
3.0 MHZ
Fig.1 Active region safe operating area
20
10
5.0
2.0
1.0
0.5
0.2
0.1
2
10 ms
DC
1 ms 100 us
10 us
Second Breakdown limited
Bonding Wire limited
Thermally Limited
TC = 25°C(Single Pulse)
5 10 20
50
100
200
Collector-emitter voltage, VCE (V)
There are two limitations on the power handling
ability of a transistor: average junction temperature
and second breakdown. Safe operating area curves
indicate lC-VCE limits of the transistor that must be
observed for reliable operation; i.e., the transistor
must not be subjected to greater dissipation than the
curves indicate.
The data of figure 1 is based on TJ(pk) =150°C. TC is
variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided
TJ(pk) 150°C. At high case temperatures, thermal
limitations wil l reduce the power that can be handled
to values less than the limitations imposed by second
breakdown.
www.nellsemi.com
Page 2 of 4




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BD911 transistor

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