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BD243C 반도체 회로 부품 판매점

NPN SILICON POWER TRANSISTOR



DRIX SEMICONDUCTOR 로고
DRIX SEMICONDUCTOR
BD243C 데이터시트, 핀배열, 회로
NPN SILICON POWER TRANSISTOR BD243C
65 W at 25ºC Case Temperature
6A Continuous Collector Current
10A Peak Collector Current
100V Collector-Emitter Voltage
Isolated transistor package available
on request
Custom selections possible
Absolute maximum ratings at 25ºC case temperature (unless otherwise noted)
RATING
Collector-Base Voltage (Ie=0)
SYMBOL
VCBO
VALUE
100
UNIT
V
Collector-Emitter Voltage (Ib=0)
VCEO
100 V
Emitter-base voltage (reverse)
Continuous collector current
Peak collector current (max 300µs, duty cycle 2%)
Continuous base current
Continuous device dissipation at max 25ºC case temperature (see note 1)
Continuous device dissipation at max 25ºC free air temperature (see note 2)
Unclamped inductive load energy (see note 3)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
VEBO
IC
ICM
IB
P tot
P tot
½LIC2
Tj
T stg
TL
5
6
10
3
65
2
62.5
-65 to
+150
-65 to
+150
250
V
A
A
A
W
W
mJ
ºC
ºC
ºC
NOTES
1. Derate linearly to 150ºC case temperature at the rate of 0.52 W/ºC. This rating is not applicable to isolated packages.
2. Derate linearly to 150ºC free air temperature at the rate of 16 mW/ºC
3. This rating is based on the capability of the transistor to operate safely in a circuit of: L=20 mH, IB(on)=40mA,
RBE = 270 ohm, VBE(off) = 0, RS = 0.1 ohm, ICC = 2.5A., duty max 1%.
DRIX SEMICONDUCTOR DATASHEET


BD243C 데이터시트, 핀배열, 회로
NPN SILICON POWER TRANSISTOR BD243C
Electrical characteristics at 25ºC case temperature
PARAMETER
TEST CONDITIONS
V(BR)CEO Collector-emitter IC = 30 mA
breakdown voltage
ICES
Collecor-emitter
VCE = 100V
cut-off current
ICEO
Collector cut-off
VCE = 100V
current
IEBO
Emitter cut-off
VEB = 5V
current
hFE
Forward current
transfer ratio
VCE = 4V
VCE = 4V
VCE(sat) Collector-emitter IB = 600mA
saturation voltage
Vbe Base-emitter
Vce = 4V
voltage
hfe Small signal forward VCE = 10V
current transfer ratio
IB = 0
VBE = 0
IB = 0
IC = 0
IC = 300mA
IC = 3A
IC = 6A
IC = 6A
IC = 500mA
(see note 4)
MIN TYP MAX UNIT
100 120
V
0.03 400
µA
0.03 700
µA
1 mA
30
(see notes 4 and 5) 15
100
60
(see notes 4 and 5)
1.2 1.5
V
(see notes 4 and 5)
12
V
f = 1 kHz
20
NOTES
4. Measured in pulse mode tp=300µs, duty cycle <2%
5. To be measured using sense contacts for base and emitter.
Thermal characteristics
PARAMETER
RèJC Junction to case thermal resistance
RèJA Junction to free air thermal resistance
MIN
TYP
MAX
1.92
62.5
UNIT
ºC/W
ºC/W
Resistive-load-switching characteristics at 25ºC case temperature
PARAMETER
ton Turn-on time
toff Turn-off time
TEST CONDITIONS
IC = 1A
VBE(off) = -4 V
IB(on) = 100mA
RL = 20 ohm
IB(off)= -100mA
t P = 20 µs
MIN
TYP
0.3
1
MAX UNIT
µs
µs
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BD243C transistor

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