|
SavantIC |
SavantIC Semiconductor
Silicon NPN Darlington Power Transistors
Product Specification
TIP110/111/112
DESCRIPTION
·With TO-220C package
·DARLINGTON
·High DC current gain
·Low collector saturation voltage
·Complement to type TIP115/116/117
APPLICATIONS
·For industrial use
PINNING
PIN
DESCRIPTION
1 Base
2
Collector;connected to
mounting base
3 Emitter
ABSOLUTE MAXIMUM RATINGS(Tc=25 )
SYMBOL
PARAMETER
CONDITIONS
TIP110
VCBO
Collector-base voltage TIP111 Open emitter
TIP112
TIP110
VCEO
Collector-emitter voltage TIP111 Open base
TIP112
VEBO
Emitter-base voltage
Open collector
IC Collector current-DC
ICM Collector current-Pulse
IB Base current-DC
PC Collector power dissipation
Tj Junction temperature
TC=25
Ta=25
Tstg Storage temperature
VALUE
60
80
100
60
80
100
5
2
4
50
50
2
150
-65~150
UNIT
V
V
V
A
A
mA
W
SavantIC Semiconductor
Silicon NPN Darlington Power Transistors
Product Specification
TIP110/111/112
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
TIP110
TIP111
TIP112
IC=30mA, IB=0
VCE(sat) Collector-emitter saturation voltage IC=2A ,IB=8mA
VBE Base-emitter on voltage
IC=2A ; VCE=4V
ICBO
Collector
cut-off current
TIP110
TIP111
TIP112
VCB=60V, IE=0
VCB=80V, IE=0
VCB=100V, IE=0
ICEO
Collector
cut-off current
TIP110
TIP111
TIP112
VCE=30V, IB=0
VCE=40V, IB=0
VCE=50V, IB=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=4V
hFE-2
DC current gain
IC=2A ; VCE=4V
COB Output capacitance
IE=0 ; VCB=10V,f=0.1MHz
MIN TYP. MAX UNIT
60
80 V
100
2.5 V
2.8 V
1 mA
1000
500
2 mA
2 mA
100 pF
2
|