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BD237 반도체 회로 부품 판매점

Medium Power Transistors



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BD237 데이터시트, 핀배열, 회로
BD237
Medium Power Transistors
Features:
Epitaxial Silicon Power Transistors.
Intended for Use in Medium Power Linear Switching Applications.
TO-126 Plastic Package
Dimensions
A
B
C
D
E
F
G
L
M
N
P
S
Pin Configuration:
1. Emitter
2. Collector
3. Base
Minimum
Maximum
7.4 7.8
10.5 10.8
2.4 2.7
0.7 0.9
2.25 (Typical)
0.49 0.75
4.5 (Typical)
15.7 (Typical)
1.27 (Typical)
3.75 (Typical)
3.0 3.2
2.5 (Typical)
Dimensions : Millimetres
Page 1
11/05/08 V1.1


BD237 데이터시트, 핀배열, 회로
BD237
Medium Power Transistors
Absolute Maximum Ratings
Description
Collector-Base Voltage
Collector-Emitter Voltage
Collector Emitter Voltage (RBE = 1K)
Emitter Base Voltage
Collector Current
Collector Peak Current
Power Dissipation at Tc = 25°C
Derate above 25°C
Power Dissipation at Ta = 25°C
Operating and Storage Junction
Temperature Range
Thermal Characteristics
Junction to Case
Junction to Ambient in Free Air
Symbol
VCBO
VCEO
VCER
VEBO
IC
ICM
PD
Tj, Tstg
Rth (j-c)
Rth (j-a)
BD237
100
80
100
5.0
2.0
6.0
25
1.25
10
-65 to +150
100
4.16
Electrical Characteristics (TC = 25°C Unless Specified Otherwise)
Description
Symbol
Test Condition
Collector Cut off Current
ICBO
VCB = 100V, IE = 0
TC = 150°C
VCB = 100V, IE = 0
Emitter Cut off Current
IEBO
VEB = 5V, IC = 0
Collector Emitter Sustaining Voltage *VCEO (sus)
IC = 0.1A, IB = 0
Collector Emitter Saturation Voltage *VCEO (sat)
IC = 1.0A, IB = 0.1A
Base Emitter Voltage
*VBE (on)
IC = 1.0A, VCE = 2V
DC Current Gain
*hFE
IC = 150mA, VCE = 2V
IC = 1.0A, VCE = 2V
Current Gain Bandwidth Product
fT IC = 250mA, VCE = 10V
*hFE1/hFE2
Matched
Pairs
IC = 250mA, VCE = 2V
*Pulse Test : Pulse Width = 300µs, Duty Cycle = 1.5%.
Minimum
-
-
80
-
-
40
25
3
-
Typical
-
-
-
-
-
-
-
1.6
Unit
V
A
W
W
mW/°C
°C
°C/W
Maximum
100
2.0
1.0
-
0.6
1.3
Unit
µA
mA
mA
V
--
- MHz
--
Page 2
11/05/08 V1.1




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