파트넘버.co.kr BD237G 데이터시트 PDF


BD237G 반도체 회로 부품 판매점

Plastic Medium Power Bipolar Transistors



ON Semiconductor 로고
ON Semiconductor
BD237G 데이터시트, 핀배열, 회로
BD237G (NPN),
BD234G, BD238G (PNP)
Plastic Medium Power
Bipolar Transistors
Designed for use in 5.0 to 10 W audio amplifiers and drivers
utilizing complementary or quasi complementary circuits.
Features
High DC Current Gain
Epoxy Meets UL 94 V0 @ 0.125 in
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
BD234G
DB237G, BD238G
VCEO
45
80
Vdc
Collector−Base Voltage
BD234G
DB237G, BD238G
VCBO
60
100
Vdc
Emitter−Base Voltage
Collector Current
Base Current
Total Device Dissipation
@ TC = 25_C
Operating and Storage Junction
Temperature Range
VEBO
IC
IB
PD
TJ, Tstg
5.0
2.0
1.0
25
– 55 to + 150
Vdc
Adc
Adc
W
_C
ESD − Human Body Model
HBM
3B
V
ESD − Machine Model
MM C
V
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Symbol
RqJC
Max
5.0
Unit
_C/W
http://onsemi.com
2.0 AMPERES
POWER TRANSISTORS
25 WATTS
PNP
COLLECTOR
2, 4
NPN
COLLECTOR
2, 4
3
BASE
3
BASE
1
EMITTER
1
EMITTER
123
TO−225
CASE 77−09
STYLE 1
MARKING DIAGRAM
YWW
BD23xG
Y = Year
WW = Work Week
BD23x = Device Code
x = 4, 7 or 8
G = Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the
package dimensions section on page 4 of this data
sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
December, 2013 − Rev. 17
1
Publication Order Number:
BD237/D


BD237G 데이터시트, 핀배열, 회로
BD237G (NPN), BD234G, BD238G (PNP)
ÎÎÎÎELEÎÎCTÎÎRICÎÎAL ÎÎCHAÎÎRAÎÎCTEÎÎRISÎÎTICÎÎS (TÎÎC=ÎÎ25_CÎÎunÎÎlessÎÎotheÎÎrwisÎÎe noÎÎted)ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
Symbol
Min
Max
Unit
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 0.1 Adc, IB = 0)
BD237G, BD238G
BD234G
V(BR)CEO
80
45
Vdc
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0)
BD237G, BD238G
(VCB = 60 Vdc, IE = 0)
BD234G
ICBO
mAdc
0.1
0.1
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
mAdc
1.0
DC Current Gain
(IC = 0.15 A, VCE = 2.0 V)
(IC = 1.0 A, VCE = 2.0 V)
hFE1
hFE2
40
25
Collector−Emitter Saturation Voltage (Note 1)
(IC = 1.0 Adc, IB = 0.1 Adc)
VCE(sat)
Vdc
0.6
Base−Emitter On Voltage (Note 1)
(IC = 1.0 Adc, VCE = 2.0 Vdc)
VBE(on)
Vdc
1.3
Current−Gain − Bandwidth Product
(IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz)
fT MHz
3.0 −
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
10
3
TJ = 150°C
1
100 ms
The Safe Operating Area Curves indicate IC−VCE limits
below which the device will not enter secondary breakdown.
1 ms
5 ms
dc
Collector load lines for specific circuits must fall within the
applicable Safe Area to avoid causing a catastrophic failure.
To insure operation below the maximum TJ,
power−temperature derating must be observed for both
steady state and pulse power conditions.
0.3
0.1
13
BD236
BD237
10 30
100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 1. Active Region Safe Operating Area
http://onsemi.com
2




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