BD436G 반도체 회로 부품 판매점
Plastic Medium Power Silicon PNP Transistor
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 ON Semiconductor |
BD436G, BD438G, BD440G,
BD442G
Plastic Medium Power
Silicon PNP Transistor
This series of plastic, medium−power silicon PNP transistors can be
used for for amplifier and switching applications. Complementary
types are BD437 and BD441.
Features
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
BD436G
BD438G
BD440G
BD442G
VCEO
32
45
60
80
Vdc
Collector−Base Voltage
BD436G
BD438G
BD440G
BD442G
VCBO
32
45
60
80
Vdc
Emitter−Base Voltage
Collector Current
Base Current
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
VEBO
5.0
Vdc
IC 4.0 Adc
IB 1.0 Adc
PD
36 W
288 W/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg – 55 to + 150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Symbol
RqJC
Max
3.5
Unit
°C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
December, 2013 − Rev. 16
1
http://onsemi.com
4.0 AMP POWER
TRANSISTORS PNP SILICON
COLLECTOR 2, 4
BASE 3
EMITTER 1
TO−225
CASE 77−09
STYLE 1
123
MARKING DIAGRAM
YWW
BD4xxG
Y
WW
BD4xx
G
= Year
= Work Week
= Device Code
xx = 36, 36T, 38, 38T, 40, 42
= Pb−Free Package
ORDERING INFORMATION
Device
BD436G
BD436TG
BD438G
BD438TG
BD440G
BD442G
Package
TO−225
(Pb−Free)
TO−225
(Pb−Free)
TO−225
(Pb−Free)
TO−225
(Pb−Free)
TO−225
(Pb−Free)
TO−225
(Pb−Free)
Shipping
500 Units/Box
50 Units/Rail
500 Units/Box
50 Units/Rail
500 Units/Box
500 Units/Box
Publication Order Number:
BD438/D
BD436G, BD438G, BD440G, BD442G
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Collector−Emitter Breakdown Voltage
(IC = 100 mA, IB = 0)
BD436G
BD438G
BD440G
BD442G
V(BR)CEO
32
45
60
80
−
−
−
−
Vdc
−
−
−
−
Collector−Base Breakdown Voltage
(IC = 100 mA, IB = 0)
BD436G
BD438G
BD440G
BD442G
V(BR)CBO
32
45
60
80
−
−
−
−
Vdc
−
−
−
−
Emitter−Base Breakdown Voltage
(IE = 100 mA, IC = 0)
Collector Cutoff Current
(VCB = 32 V, IE = 0)
BD436G
(VCB = 45 V, IE = 0)
BD438G
(VCB = 60 V, IE = 0)
BD440G
(VCB = 80 V, IE = 0)
BD442G
V(BR)EBO
5.0
−
Vdc
−
ICBO
mAdc
− − 0.1
− − 0.1
− − 0.1
− − 0.1
Emitter Cutoff Current
(VEB = 5.0 V)
DC Current Gain
(IC = 10 mA, VCE = 5.0 V)
BD436G
BD438G
BD440G
BD442G
IEBO
−
mAdc
− 1.0
hFE −
40 −
30 −
20 −
15 −
−
−
−
−
DC Current Gain
(IC = 500 mA, VCE = 1.0 V)
BD436G
BD438G
BD440G
BD442G
hFE
85
85
40
40
−
− 475
− 475
− 475
− 475
DC Current Gain
(IC = 2.0 A, VCE = 1.0 V)
BD436G
BD438G
BD440G
BD442G
hFE −
50 −
40 −
25 −
15 −
−
−
−
−
Collector Saturation Voltage
(IC = 2.0 A, IB = 0.2 A)
BD436G
(IC = 3.0 A, IB = 0.3 A)
BD438G
BD440G
BD442G
VCE(sat)
−
−
−
−
Vdc
− 0.5
− 0.7
− 0.8
− 0.8
Base−Emitter On Voltage
(IC = 2.0 A, VCE = 1.0 V)
BD436G/BD438G
BD440G/BD442G
VBE(ON)
−
−
Vdc
− 1.1
− 1.5
Current−Gain − Bandwidth Product
(VCE = 1.0 V, IC = 250 mA, f = 1.0 MHz)
fT
3.0 −
MHz
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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BD436G transistor
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
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전력반도체 문의 : 010-3582-2743
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