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BC549 반도체 회로 부품 판매점

NPN SILICON PLANAR EPITAXIAL TRANSISTORS



CDIL 로고
CDIL
BC549 데이터시트, 핀배열, 회로
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
CB E
BC549,A.B,C
BC550,A,B,C
TO-92
Plastic Package
For Lead Free Parts, Device
Part # will be Prefixed with
"T"
Low Noise Transistors
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC)
DESCRIPTION
SYMBOL
Collector Emitter Voltage
VCEO
Collector Base Voltage
VCBO
Emitter Base Voltage
VEBO
Collector Current Continuous
IC
Power Dissipation at Ta=25ºC
PD
Derate Above 25ºC
Power Dissipation at Tc=25ºC
PD
Derate Above 25ºC
Operating And Storage Junction
Temperature Range
Tj, Tstg
BC549
30
30
5.0
100
625
5.0
1.5
12
- 55 to +150
THERMAL RESISTANCE
Junction to Case
Junction to Ambient in free air
Rth (j-c)
Rth (j-a)
83.3
200
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
Collector Emitter Voltage
SYMBOL
VCEO
TEST CONDITION
IC=1mA, IB=0
BC549
Collector Base Voltage
VCBO
BC550
IC=100µA, IE=0
BC549
Emitter Base Voltage
VEBO
BC550
IE=10µA, IC=0
Collector Cut Off Current
Emitter Cut Off Current
ICBO
VCB=30V, IE=0
VCB=30V, IE=0, Ta= +125ºC
IEBO
VEB=4V, IC=0
MIN
30
45
30
50
5.0
BC549_550Rev_1 081205E
BC550
45
50
TYP MAX
15
5.0
15
UNITS
V
V
V
mA
mW
mW/ºC
W
mW/ºC
ºC
ºC/W
ºC/W
UNITS
V
V
V
V
V
nA
µA
nA
Continental Device India Limited
Data Sheet
Page 1 of 5


BC549 데이터시트, 핀배열, 회로
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
CB E
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
DC Current Gain
hFE IC=10µA, VCE=5V
B/C
Collector Emitter Saturation Voltage VCE (sat)
Base Emitter Saturation Voltage
Base Emitter On Voltage
*VBE (sat)
VBE (on)
IC=2mA, VCE=5V
BC549A/BC550A
BC549B/550B
BC549C/550C
BC549/550
IC=10mA, IB=0.5mA
IC=10mA, IB=See Note (1)
*IC=100mA, IB=5mA
IC=100mA, IB=5mA
IC=10µA, VCE=5V
IC=100µA, VCE=5V
IC=2mA, VCE=5V
SMALL SIGNAL CHARACTERISTICS
DESCRIPTION
SYMBOL
TEST CONDITION
Transistors Frequency
Collector Base Capacitance
Small Signal Current
fT IC=10mA, VCE=5V, f=100MHz
Ccbo
VCE=10V, IE=0, f=1MHz
hfe IC=2mA, VCE=5V, f=1KHz
BC549/550
BC549B/550B
Noise Figure
BC549C/550C
NF IC=200µA, VCE=5V, RS=2 k,
f=30 Hz - 15KHz
IC=200µA, VCE=5V, RS=100
k, f=1KHz
Note 1- IB is value for which IC= 11mA at VCE=1V
*Pulse Test = 300µs - Duty Cycle = 2%
BC549_550Rev_1 081205E
MIN
100
110
200
420
110
0.55
MIN
125
240
450
BC549,A.B,C
BC550,A,B,C
TO-92
Plastic Package
For Lead Free Parts, Device
Part # will be Prefixed with
"T"
TYP MAX UNITS
220
450
800
800
0.25
0.60
0.60
1.1
0.52
0.55
0.70
V
V
V
V
V
V
V
TYP MAX UNITS
250 MHz
2.5 pF
900
500
900
2.5 dB
10 dB
Continental Device India Limited
Data Sheet
Page 2 of 5




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