CJ2045 반도체 회로 부품 판매점
Dual 40V complementary transistors
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 JCST |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23-6LPlastic-Encapsulate Transistors
CJ2045 Dual 40V complementary transistors
FEATURES
z 40V complementary device
z High hFE
z Mounting cost and area can be cut in half
MARKING: 2045
EQUIVALENT CIRCUIT
SOT-23-6L
Tr1 NPN and Tr2 PNP Absolute Maximum Ratings (Ta=25℃)
Symbol
VCBO
VCEX
VCEO
VEBO
IC
ICM
PC
RθJA
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current- Continuous
Collector Current- Peak
Collector Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Value
NPN
PNP
40 -40
40 -40
30 -30
7 -7
1.5 -1.5
5 -5
350 350
357 357
150
-55~+150
Unit
V
V
V
V
A
A
mW
℃/W
℃
℃
B,Dec,2012
Tr1 NPN ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Symbol
Test conditions
V(BR)CBO IC=100μA, IE=0
V(BR)CEO* IC=10mA, IB=0
V(BR)CEX IC=1μA, VBE(off)=-0.5V
V(BR)EBO IE=100μA, IC=0
ICBO
VCB=32V, IE=0
ICER VCE=16V, R≤1kΩ
IEBO
VEB=6V, IC=0
hFE*
VCE=2V, IC=100mA
VCE(sat)*
VBE(sat)*
IC=750mA, IB=15mA
Min
40
30
40
7
180
Tr2 PNP ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
V(BR)CBO IC=-100μA, IE=0
Collector-emitter breakdown voltage
V(BR)CEO* IC=-10mA, IB=0
Collector-emitter breakdown voltage
V(BR)CEX IC=-1μA, VBE(off)=0.5V
Emitter-base breakdown voltage
V(BR)EBO IE=-100μA, IC=0
Collector cut-off current
ICBO
VCB=-32V, IE=0
Collector cut-off current
ICER VCE=-16V, R≤1kΩ
Emitter cut-off current
IEBO VEB=-6V, IC=0
DC current gain
hFE* VCE=-2V, IC=-100mA
Collector-emitter saturation voltage
VCE(sat)*
Base-emitter saturation voltage
VBE(sat)*
*Pulse Test : Pulse Width≤300µs, Duty Cycle≤2%.
IC=-750mA, IB=-15mA
Min
-40
-30
-40
-7
180
Typ Max Unit
V
V
V
V
20 nA
20 nA
20 nA
500
0.375 V
1.2 V
Uni
Typ Max
t
V
V
V
V
-20 nA
-20 nA
-20 nA
500
-0.375 V
-1.2 V
B,Dec,2012
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CJ2045 transistor
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