(PDF) NJD1718 Datasheet - Silicon PNP Power Transistor

Número de pieza	NJD1718
Descripción	Silicon PNP Power Transistor
Fabricantes	Inchange Semiconductor
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No Preview Available ! isc Silicon PNP Power Transistor INCHANGE Semiconductor NJD1718 DESCRIPTION ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= -0.5V(Max)( IC= -1A; IB= -0.05A) ·High Switching speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-gain audio amplifier and power Switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM IB PC TJ Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Total Power Dissipation @ TC=25℃ Collector Power Dissipation Ta=25℃ Junction Temperature -50 V -50 V -5 V -2 A -3 A -0.4 A 15 W 1.68 150 ℃ Tstg Storage Temperature Range -65~150 THERMAL CHARACTERISTICS SYMBO L PARAMETER MAX Rth j-c Thermal Resistance, Junction to Case 10 ℃ UNIT ℃/W Rth j-a Thermal Resistance,Junction to Ambient 89.3 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark 1 page

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PDF NJD1718 Data sheet ( Hoja de datos )