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Inchange Semiconductor |
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BD799
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 80V(Min)
·Low Saturation Voltage
·Complement to Type BD800
APPLICATIONS
·Designed for a wide variety of medium-power switching and
amplifier applications , such as series and shunt regulators
and driver and output stages of high-fidelity amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
80 V
VCEO Collector-Emitter Voltage
80 V
VEBO Emitter-Base Voltage
5V
IC Collector Current-Continuous
8A
IB Base Current-Continuous
PC
Collector Power Dissipation
TC=25℃
Tj Junction Temperature
Tstg Storage Ttemperature Range
3A
65 W
150 ℃
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.92 ℃/W
isc website:www.iscsemi.cn
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BD799
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0
80
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A
VBE(on) Base-Emitter On Voltage
IC= 3A ; VCE= 2V
ICBO Collector Cutoff Current
VCB= 80V; IE= 0
1V
1.6 V
0.1 mA
IEBO Emitter Cutoff Current
VEB= 5V; IC= 0
1 mA
hFE-1
DC Current Gain
IC= 1A ; VCE= 2V
30
hFE-2
DC Current Gain
IC= 3A ; VCE= 2V
15
fT Current-Gain—Bandwidth Product IC= 0.25A ;VCE= 10V,ftest= 1MHz 3
MHz
isc website:www.iscsemi.cn
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