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Diodes |
BC847PNQ
COMPLEMENTARY PAIR SMALL SIGNAL TRANSISTOR IN SOT363
Description
This Bipolar Junction Transistor (BJT) is designed to meet the
stringent requirements of Automotive Applications.
Features
Epitaxial Die Construction
Two Internally Isolated NPN/PNP Transistors in One Package
Ideal for Medium Power Amplification and Switching
Ultra-Small Surface Mount Package
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. "Green" Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Case: SOT363
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin Finish.
Solderable per MIL-STD-202, Method 208
Weight: 0.006 grams (Approximate)
SOT363
C1 B2 E2
Top View
E1 B1 C2
Device Schematic
Top View
Ordering Information (Notes 4 & 5)
Part Number
BC847PNQ-7-F
BC847PNQ-7R-F
Compliance
Automotive
Automotive
Marking
K7P
K7P
Reel Size (inches)
7
7
Tape Width (mm)
8
8
Quantity per Reel
3,000
3,000
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
K7P = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: D = 2016)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2015
C
Jan
1
2016
D
Feb Mar
23
2017
E
Apr
4
BC847PNQ
Document number: DS38982 Rev. 1 - 2
2018
F
May Jun
56
2019
G
Jul
7
2020
H
Aug Sep
89
1 of 6
www.diodes.com
2021
I
Oct
O
2022
J
Nov Dec
ND
June 2016
© Diodes Incorporated
BC847PNQ
Absolute Maximum Ratings: NPN, BC847B Type (Q1) (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Emitter Current
Symbol
VCBO
VCEO
VEBO
IC
ICM
IEM
Value
50
45
6
100
200
200
Unit
V
V
V
mA
mA
mA
Absolute Maximum Ratings: PNP, BC857B Type (Q2) (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Emitter Current
Symbol
VCBO
VCEO
VEBO
IC
ICM
IEM
Value
-50
-45
-6
-100
-200
-200
Unit
V
V
V
mA
mA
mA
Thermal Characteristics – Total Device (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation (Note 6) Total Device
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
Symbol
PD
RJA
TJ, TSTG
Value
200
625
-65 to +150
Unit
mW
°C/W
°C
Note:
6. For a device mounted on minimum recommended pad layout with 1oz copper that is on a single-sided 1.6mm FR-4 PCB; the device is measured
under still air conditions whilst operating in a steady-state.
Thermal Characteristics – Total Device
250
200
150
100
50
0
0
40
80 120 160
200
TA, AMBIENT TEMPERATURE (°C)
Fig. 1, Power Derating Curve (Total Device)
BC847PNQ
Document number: DS38982 Rev. 1 - 2
2 of 6
www.diodes.com
June 2016
© Diodes Incorporated
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