GX3442 반도체 회로 부품 판매점
RF POWER GAN TRANSISTOR
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 POLYFET RF DEVICES |
polyfet rf devices
GX3442
General Description
Polyfet's GAN (on SiC) HEMT
power transistors contain no
internal matching; making them
suitable for both broadband and
narrow band applications.
The use of a thermally enhanced
package enables this device to
have superior heat dissipation
properties. The high drain break
down voltage permits this device
to operate over a wide voltage
range.
RF POWER GAN TRANSISTOR
120.0 Watts Single Ended
Package Style GX
HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE
ROHS COMPLIANT
Suitable for use across 1-2500Mhz
ABSOLUTE MAXIMUM RATINGS ( T = 25 oC )
Total
Device
Dissipation
160 Watts
Junction to
Case Thermal
Resistance
o
1.80 C/W
Maximum
Junction
Temperature
200 oC
Storage
Temperature
oo
-65 C to 150 C
Drain to
Source
Voltage
180 V
Gate to
Source
Voltage
-10 V to + 2 V
RF CHARACTERISTICS ( 120.0 WATTS OUTPUT )
SYMBOL PARAMETER
MIN TYP MAX UNITS
TEST CONDITIONS
Gps Common Source Power Gain
Drain Efficiency
11
55
dB Idq = 0.50 A, Vds = 48.0 V, F = 2,000 MHz
% Idq = 0.50 A, Vds = 48.0 V, F = 2,000 MHz
VSWR Load Mismatch Tolerance
10:1 Relative Idq = 0.50 A, Vds = 48.0 V, F = 2,000 MHz
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
SYMBOL PARAMETER
MIN TYP MAX UNITS
TEST CONDITIONS
Bvdss Drain Breakdown Voltage
250
V Ids = 20.00mA, Vgs = -8V
Idsat
Saturation Current
17.00
Amp
Vgs = +2V, Vds = 10V
Idss
Vgs
Ciss
Crss
Zero Bias Drain Current
Gate Bias for Drain Current
Common Source Input Capacitance
Common Source Feedback Capacitance
-2.4
20.0
0.90
6.0 mA
V
pF
pF
Vds = 48.0 V, Vgs = -8V
Vds = 48.0 V Ids = 0.50A
Vds = 48.0 Vgs =-8V, F = 1 MHz
Vds = 48.0 Vgs =-8V, F = 1 MHz
Coss Common Source Output Capacitance
12.0
pF Vds = 48.0 Vgs =-8V, F = 1 MHz
POLYFET RF DEVICES
REVISION 09/09/2013
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com
POUT VS PIN GRAPH
GX3442
BROADBAND PERFORMANCE
BROADBAND PERFORMANCE
BROADBAND PERFORMANCE
BROADBAND PERFORMANCE
PACKAGE DIMENSIONS IN INCHES
Tolerance .XX +/-0.01 .XXX +/-.005 inches
POLYFET RF DEVICES
REVISION 09/09/2013
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com
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제조업체: POLYFET RF DEVICES
( polyfet )
GX3442 transistor
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
관련 데이터시트
GX3441
RF POWER GAN TRANSISTOR - POLYFET RF DEVICES
GX3442
RF POWER GAN TRANSISTOR - POLYFET RF DEVICES