파트넘버.co.kr BCP56-16T3G 데이터시트 PDF


BCP56-16T3G 반도체 회로 부품 판매점

NPN Silicon Epitaxial Transistor



ON Semiconductor 로고
ON Semiconductor
BCP56-16T3G 데이터시트, 핀배열, 회로
BCP56 Series
NPN Silicon
Epitaxial Transistor
These NPN Silicon Epitaxial transistors are designed for use in
audio amplifier applications. The device is housed in the SOT−223
package, which is designed for medium power surface mount
applications.
Features
High Current: 1.0 A
The SOT−223 package can be soldered using wave or reflow. The
formed leads absorb thermal stress during soldering, eliminating the
possibility of damage to the die
Available in 12 mm Tape and Reel
Use BCP56T1G to Order the 7 inch/1000 Unit Reel
Use BCP56T3G to Order the 13 inch/4000 Unit Reel
PNP Complement is BCP53T1G
S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current
Total Power Dissipation
@ TA = 25°C (Note 1)
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
80 Vdc
100 Vdc
5 Vdc
1 Adc
1.5 W
12 mW/°C
Operating and Storage
Temperature Range
TJ, Tstg − 65 to 150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction−to−Ambient
(surface mounted)
RqJA
83.3
°C/W
Maximum Temperature for
Soldering Purposes
Time in Solder Bath
TL
260 °C
10 Sec
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Device mounted on a FR−4 glass epoxy printed circuit board 1.575 in x
1.575 in x 0.0625 in; mounting pad for the collector lead = 0.93 sq in.
www.onsemi.com
MEDIUM POWER NPN SILICON
HIGH CURRENT TRANSISTOR
SURFACE MOUNT
COLLECTOR 2,4
BASE
1
EMITTER 3
4
123
SOT−223
CASE 318E
STYLE 1
MARKING DIAGRAM
AYW
XXXXXG
G
1
XXXXX = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
April, 2016 − Rev. 12
1
Publication Order Number:
BCP56T1/D


BCP56-16T3G 데이터시트, 핀배열, 회로
BCP56 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristics
Symbol
Min Typ Max
Unit
OFF CHARACTERISTICS
Collector−Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
Collector−Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
V(BR)CBO
100
Vdc
V(BR)CEO
80
Vdc
Emitter−Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector−Base Cutoff Current
(VCB = 30 Vdc, IE = 0)
Emitter−Base Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
V(BR)EBO
ICBO
IEBO
5.0
− − Vdc
− 100 nAdc
− 10 mAdc
ON CHARACTERISTICS (Note 2)
DC Current Gain
(IC = 5.0 mA, VCE = 2.0 V)
(IC = 150 mA, VCE = 2.0 V)
(IC = 500 mA, VCE = 2.0 V)
Collector−Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
All Part Types
BCP56
BCP56−10
BCP56−16
All Types
hFE
25 −
40 − 250
63 − 160
100 − 250
25 −
VCE(sat)
− 0.5
Vdc
Base−Emitter On Voltage
(IC = 500 mAdc, VCE = 2.0 Vdc)
VBE(on)
− 1.0
Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 35 MHz)
fT
− 130 −
MHz
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%
ORDERING INFORMATION
Device
Marking
Package
Shipping
BCP56T1G
SBCP56T1G*
BH SOT−223
(Pb−Free)
1000 / Tape & Reel
BCP56T3G
SBCP56T3G*
BH SOT−223
(Pb−Free)
4000 / Tape & Reel
BCP56−10T1G
SBCP56−10T1G*
BH−10
SOT−223
(Pb−Free)
1000 / Tape & Reel
BCP56−10T3G
NSVBCP56−10T3G*
BH−10
SOT−223
(Pb−Free)
4000 / Tape & Reel
BCP56−16T1G
SBCP56−16T1G*
BH−16
SOT−223
(Pb−Free)
1000 / Tape & Reel
BCP56−16T3G
SBCP56−16T3G*
BH−16
SOT−223
(Pb−Free)
4000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable.
www.onsemi.com
2




PDF 파일 내의 페이지 : 총 5 페이지

제조업체: ON Semiconductor

( onsemi )

BCP56-16T3G transistor

데이터시트 다운로드
:

[ BCP56-16T3G.PDF ]

[ BCP56-16T3G 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


BCP56-16T3G

NPN Silicon Epitaxial Transistor - ON Semiconductor