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PDF 2SB1261 Data sheet ( Hoja de datos )
| Número de pieza | 2SB1261 | |
| Descripción | PNP Transistor | |
| Fabricantes | LGE | |
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2SB1261
Transistor(PNP)
1. BASE
1 2. COLLECTOR
3. EMITTER
TO-252-2L
Features
High hFE hFE=100 to 400
Low vCE(sat) vCE(sat) ≤0.3V
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
-60
VCEO
Collector-Emitter Voltage
-60
VEBO
Emitter-Base Voltage
-7
IC Collector Current -Continuous
-3
PD Collector Power Dissipation
2
TJ Junction Temperature
150
Tstg Storage Temperature
-55-150
Units
V
V
V
A
W
℃
℃
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Turn on Time
Switching Time
Storage Time
Fall Time
CLASSIFICATION OF hFE(1)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
hFE(3)
VCE(sat)
VBE(sat)
fT
Cob
ton
tstg
tf
IC=-100µA, IE=0
IC =-1mA, IB=0
IE=-100µA, IC=0
VCB=-60V, IE=0
VEB=-7V, IC=0
VCE=-2V, IC=-200mA
VCE=-2V, IC=-600mA
VCE=-2V, IC=-2A
IC=-1.5A, IB=-150mA
IC=-1.5A, IB=-150mA
VCE=-5V, IC=-1.5A
VCB=-10V, IE=0, f=1MHz
VCC=-10V, IC=-1A, IB1=-IB2=-0.1A,
RL=10Ω
Rank
ML
MIN
-60
-60
-7
60
100
50
TYP MAX UNIT
V
V
V
-10 µA
-10 µA
400
-0.3 V
-1.2 V
50 MHz
40 pF
0.5
2.0 µs
0.5
K
Range
100-200
160-320
200-400
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SB1261.PDF ] | |
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