파트넘버.co.kr AO3414 데이터시트 PDF


AO3414 반도체 회로 부품 판매점

N-Channel Enhancement Mode Field Effect Transistor



Tuofeng Semiconductor 로고
Tuofeng Semiconductor
AO3414 데이터시트, 핀배열, 회로
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
AO3414
AO3414
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO3414 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V. This
device is suitable for use as a load switch or in PWM
applications. Standard Product AO3414 is Pb-free
(meets ROHS & Sony 259 specifications). AO3414
is a Green Product ordering option. AO3414
is electrically identical.
Features
VDS (V) = 20V
ID = 4.2 A (VGS = 4.5V)
RDS(ON) < 50m(VGS = 4.5V)
RDS(ON) < 63m(VGS = 2.5V)
TO-236
(SOT-23)
Top View
G
D
S
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
20
±12
4.2
3.2
15
1.4
0.9
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
70
100
63
Max
90
125
80
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W


AO3414 데이터시트, 핀배열, 회로
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
AO3414
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS
VGS(th)
ID(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
RDS(ON) Static Drain-Source On-Resistance
Conditions
ID=250µA, VGS=0V
VDS=16V, VGS=0V
VDS=0V, VGS12V
VDS=VGS ID=250µA
VGS=4.5V, VDS=5V
VGS=4.5V, ID=4.2A
VGS=2.5V, ID=3.7A
Min Typ Max Units
20 V
1 µA
100 nA
0.4 0.6
1
V
15 A
41 50 m
52 63 m
gFS Forward Transconductance
VDS=5V, ID=4.2A
VSD Diode Forward Voltage
IS=1A,VGS=0V
IS Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
VGS=4.5V, VDS=10V, ID=4.2A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
tD(off)
Turn-On Rise Time
Turn-Off DelayTime
VGS=5V, VDS=10V, RL=2.7,
RGEN=6
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=4A, dI/dt=100A/µs
Qrr Body Diode Reverse Recovery Charge IF=4A, dI/dt=100A/µs
8
0.76
436
66
44
3
6.2
1.6
0.5
5.5
6.3
40
12.7
12.3
3.5
S
1.2 V
2A
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C.
The value in any given application depends on the user's specific board design. The current rating is based on the t10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating.
Rev4 : June 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.




PDF 파일 내의 페이지 : 총 4 페이지

제조업체: Tuofeng Semiconductor

( tuofeng )

AO3414 transistor

데이터시트 다운로드
:

[ AO3414.PDF ]

[ AO3414 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


AO3410

N-Channel Enhancement Mode Field Effect Transistor - Alpha & Omega Semiconductors



AO3410

N-Channel Enhancement Mode Field Effect Transistor - Tuofeng Semiconductor



AO3411

P-Channel 20-V (D-S) MOSFET - Freescale



AO3413

20V P-Channel MOSFET - Alpha & Omega Semiconductors



AO3413

P-Channel Enhancement Mode Field Effect Transistor - Freescale



AO3414

N-Channel Enhancement Mode Field Effect Transistor - Alpha & Omega Semiconductors



AO3414

N-Channel Enhancement Mode Field Effect Transistor - Kexin



AO3414

N-Channel Enhancement Mode Field Effect Transistor - Freescale



AO3414

N-Channel Enhancement Mode Field Effect Transistor - Tuofeng Semiconductor