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AO3401 반도체 회로 부품 판매점

P-Channel Enhancement Mode Field Effect Transistor



Tuofeng Semiconductor 로고
Tuofeng Semiconductor
AO3401 데이터시트, 핀배열, 회로
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
AO3401
AO3401
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO3401 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a load switch or in PWM
applications. Standard product AO3401 is Pb-free
(meets ROHS & Sony 259 specifications). AO3401
is a Green Product ordering option.
Features
VDS (V) = -30V
ID = -4.0 A (VGS = -10V)
RDS(ON) < 60m(VGS = -10V)
RDS(ON) < 70m(VGS = -4.5V)
RDS(ON) < 100m(VGS = -2.5V)
(SOT-23)
Top View
G
D
S
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
-30
±12
-4.0
-3.5
-30
1.4
1
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
65
85
43
Max
90
125
60
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W


AO3401 데이터시트, 핀배열, 회로
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
AO3401
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=-250µA, VGS=0V
-30
V
IDSS Zero Gate Voltage Drain Current
VDS=-24V, VGS=0V
-1 µA
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
VDS=0V, VGS =±12V
VDS=VGS ID=-250µA
On state drain current
VGS=-4.5V, VDS=-5V
Static Drain-Source On-Resistance
VGS=-10V, ID=-4A
VGS=-4.5V, ID=-3A
VGS=-2.5V, ID=-1.2A
Forward Transconductance
VDS=-5V, ID=-5A
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
±100 nA
-0.7 -1 -1.3 V
-25 A
50 60 m
60 70 m
85 100 m
7 11
S
-1.2 V
-2.2 A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
VGS=-4.5V, VDS=-15V, ID=-4A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
VGS=-10V, VDS=-15V, RL=3.6,
tD(off)
Turn-Off DelayTime
RGEN=6
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=-4A, dI/dt=100A/µs
Qrr Body Diode Reverse Recovery Charge IF=-4A, dI/dt=100A/µs
954
115
77
6
9.4
2
3
6.3
3.2
38.2
12
20.2
11.2
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating.




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AO3401 transistor

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