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Tuofeng Semiconductor |
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
TO-92 Plastic-Encapsulate Transistors
S9015 TRANSISTOR (PNP)
FEATURES
z High total power dissipation.(PC=0.45W)
z High hFE and good linearity
z Complementary to S9014
TO-92
1.EMITTER
2. BASE
3. COLLECTOR
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
-50 V
VCEO
Collector-Emitter Voltage
-45 V
VEBO
Emitter-Base Voltage
-5 V
IC
Collector Current -Continuous
-0.1
A
PC
Collector Power Dissipation
0.45 W
Tj Junction Temperature
150 ℃
Tstg Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
CLASSIFICATION OF
Rank
Range
hFE(1)
A
60-150
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
Test conditions
IC= -100μA, IE=0
IC= -1mA, IB=0
IE=-100μA, IC=0
VCB=-50V, IE=0
VEB= -5V, IC=0
VCE=-5V, IC= -1mA
IC=-100mA, IB= -10mA
IC=-100mA, IB=-10mA
VCE=-5V, IC= -10mA
f=30MHz
MIN
-50
-45
-5
60
100
B
100-300
C
200-600
123
TYP MAX UNIT
V
V
V
-0.05 μA
-0.05 μA
1000
-0.3 V
-1 V
MHz
D
400-1000
Typical Characteristics
S9015
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