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PDF 4920 Data sheet ( Hoja de datos )
| Número de pieza | 4920 | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Tuofeng Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 4920 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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Shenzhen Tuofeng Semiconductor Technology co., LTD
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
4920
▼ Simple Drive Requirement
▼ Low On-resistance
▼ Fast Switching
Description
D2
D2
D1
D1
SO-8
G2
S2
G1
S1
The TUOFENG MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
The SO-8 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
BVDSS
RDS(ON)
ID
30V
25mΩ
7A
D1
G1 G2
S1
D2
S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
IDM
PD@TA=25℃
TSTG
TJ
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
± 20
7
20
2
0.016
-55 to 150
-55 to 150
Units
V
V
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Rthj-amb
Parameter
Thermal Resistance Junction-ambient3
Max.
Value
62.5
Unit
℃/W
1 page  
Shenzhen Tuofeng Semiconductor Technology co., LTD
4920
12
I D=7A
10 V DS =15V
8
6
4
2
0
0 2 4 6 8 10 12 14 16 18 20
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
f=1.0MHz
10000
1000
Ciss
Coss
100
Crss
10
1 5 9 13 17 21 25 29
V DS (V)
Fig 10. Typical Capacitance Characteristics
100.00
10.00
T j =150 oC
1.00
T j =25 oC
0.10
0.01
0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5
V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
3
2.5
2
1.5
1
0.5
0
-50
0 50 100
T j ,Junction Temperature ( oC)
150
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 4920.PDF ] | |
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