(PDF) S9018LT1 Datasheet - NPN Transistor

Número de pieza	S9018LT1
Descripción	NPN Transistor
Fabricantes	Tuofeng Semiconductor
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No Preview Available ! Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors S9018LT1 TRANSISTOR (NPN) FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current ICM: 0.05 Collector-base voltage A V(BR)CBO: 25 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ SOT-23 1. BASE 2. EMITTER 3. COLLECTOR 2. 4 1. 3 Unit: mm ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) VCE(sat) VBE(sat) Test conditions Ic= 100µA, IE=0 Ic= 0.1mA, IB=0 IE=100µA, IC=0 VCB=20V, IE=0 VCE=15V, IB=0 VEB= 3V, IC=0 VCE=5V, IC= 1mA IC=10mA, IB= 1mA IC=10mA, IB= 1mA MIN TYP 25 18 4 70 MAX UNIT V V V 0.1 µA 0.1 µA 0.1 µA 190 0.5 V 1.4 V Transition frequency VCE=5V, IC= 5mA fT f=400MHz 600 MHz DEVICE MARKING S9018LT1= J8 1 page

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PDF S9018LT1 Data sheet ( Hoja de datos )