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AUK |
STA3350PI
PNP Silicon Transistor
Applications
• Power amplifier application
• High current switching application
Features
• Low saturation voltage
: VCE(sat)=-0.15V Typ. @ IC=-1A, IB=-50mA
• Large collector current capacity: IC=-3A
• TO-220F-3L DIP type package
Ordering Information
Type NO.
Marking
Package Code
STA3350PI
STA3350
TO-220F-3L
PIN Connection
TO-220F-3L
Absolute Maximum Ratings
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector Power dissipation(TC=25°C)
Junction temperature
Storage temperature range
* : Single pulse, tp= 300 ㎲
Symbol
VCBO
VCEO
VEBO
IC
ICP*
PC
TJ
Tstg
Rating
-50
-50
-6
-3
-6
10
150
-55~150
[Ta=25℃]
Unit
V
V
V
A(DC)
A(Pulse)
W
°C
°C
Electrical Characteristics
Characteristic
Symbol
Test Condition
[Ta=25℃]
Min. Typ. Max. Unit
Collector-emitter breakdown voltage
BVCEO
IC=-1mA, IB=0
-50 - - V
Collector cut-off current
ICBO
VCB=-50V, IE=0
- - -1 μA
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
IEBO
hFE
hFE
VCE(sat)
VBE(sat)
VEB=-6V, IC=0
VCE=-2V, IC=-0.5A*
VCE=-2V, IC=-2A*
IC=-1A, IB=-0.05A*
IC=-2A, IB=-0.1A*
- - -1
120 -
240
40 -
-
- - -0.35
- -0.97 -1.2
μA
V
V
Transition frequency
Collector output capacitance
fT VCE=-10V, IC=-0.05A
Cob VCB=-10V, IE=0, f=1MHz
- 250 - MHz
- 28 - pF
Switching
Time
Turn-on Time
Storage Time
Fall Time
*: Pulse test : tP≤300µs, Duty cycle≤2%
ton
tstg
tf <
KSD-T0O085-000
- 100 -
- 300 -
- 50
-
ns
1
Electrical Characteristic Curves
Fig. 1 PC - Ta
Fig. 2 IC - VBE
STA3350PI
Fig. 3 IC - VCE
Fig. 4 hFE - IC
Fig. 5 VCE(sat) - IC
Fig. 6 VBE(sat) - IC
KSD-T0O085-000
2
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