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NPN Silicon Power Transistor



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KSB13003E 데이터시트, 핀배열, 회로
KSB13003E
KSU13003E / KSD13003E
NPN Silicon Power Transistor, VCBO= 700V, VCEO= 400V, IC= 1.5A
General Description
• High Voltage, High Speed Switching
• Suitable for Switching regulator, Inverters motor controls
• 150୅ Max. Operating temperature
• 8KV ESD proof at HBM (C=100໲, R=1.5໰)
Features
• VCBO = 700V
• VCEO = 400V
• VBEO = 9V
• IC = 1.5A
TO-92
TO-251
TO-252
2
3
2
1
3
2
1
3
1
Ordering Information
Ordering number
KSB13003E
KSB13003ER
KSU13003E
KSU13003ER
KSD13003E
KSD13003ER
Package
TO-92
TO-92
TO-251
TO-251
TO-252
TO-252
Pin Assignment
123
BCE
ECB
BCE
ECB
BCE
ECB
Packing
Ammo
Ammo
Tube
Tube
Reel
Reel
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KSB13003E 데이터시트, 핀배열, 회로
KSB13003E
KSU13003E / KSD13003E
NPN Silicon Power Transistor, VCBO= 700V, VCEO= 400V, IC= 1.5A
Absolute Maximum Ratings TC=25୅ unless otherwise noted
CHARACTERISTICS
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Base Current
Collector Dissipation(Tc=25୅)
Junction Temperature
Storage Temperature
SYMBOL
VCBO
VCEO
VEBO
IC
ICP
IB
PC
TJ
TSTG
TO-92
1.1
RATING
700
400
9
1.5
3
0.75
150
-65~150
TO-251(2)
25
UNIT
V
V
V
A
A
A
W
୅
୅
Electrical Characteristics TC=25୅ unless otherwise noted
CHARACTERISTICS
SYMBOL
Test Condition
Collector-Base Breakdown Voltage
VCBO
IC=500ȝA, IE=0
Collector-Emitter Breakdown Voltage
VCEO
IC=10mA, IB=0
Emitter Cut-off Current
IEBO
VEB=9V,IC=0
*DC Current Gain
hFE1
hFE2
VCE=5V,IC=0.2A
VCE=5V,IC=1A
*Collector-Emitter Saturation Voltage
VCE(sat)
IC=0.5A,IB=0.1A
IC=1A,IB=0.25A
IC=1.5A,IB=0.5A
*Base-Emitter Saturation Voltage
VBE(sat)
IC=0.5A,IB=0.1A
IC=1A,IB=0.25A
Output Capacitance
Cob VCB=10V, f=0.1MHz
Current Gain Bandwidth Product
fT VCE=10V,IC=0.1A
Turn on Time
Storage Time
Fall Time
ton Vcc=125V, Ic=2A
tstg IB1=0.2A, IB2= -0.2A
tF RL=125ȍ
* Pulse Test: Pulse Width”ȝV'XW\&\FOH”
Min Typ. Max Unit
700 V
400 V
10 ᒺ
20 40
5
0.5 V
1.0 V
3.0 V
1.2 V
1.4 V
21 ᓂ
4ᓊ
1.1 ᓪ
4.0 ᓪ
0.7 ᓪ
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