파트넘버.co.kr 2SJ210 데이터시트 PDF


2SJ210 반도체 회로 부품 판매점

MOS Fied Effect Transistor



Kexin 로고
Kexin
2SJ210 데이터시트, 핀배열, 회로
SMD Type
MOSFET
MOS Fied Effect Transistor
2SJ210
Features
Directly driven by Ics having a 5V poer supply.
Not necessary to consider driving current because of
its high input impedance.
Possible to reduce the number of parts by omitting the biasresistor.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
12
0.95+0.1
-0.1
1.9+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage VGS=0
Gate to source voltage VDS=0
Drain current (DC)
Drain current(pulse) *
Power dissipation
Channel temperature
Storage temperature
* PW 10 ms; d 50%.
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gate cut-off voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
VDSS
VGSS
ID
ID
PD
Tch
Tstg
Rating
-60
20
200
400
200
150
-55 to +150
Unit
V
V
mA
mA
mW
1.B1aGseATE
2.2EmSiOtteUrRCE
3.3coDlleRctAorIN
Symbol
Testconditons
IDSS VDS=-60V,VGS=0
IGSS VGS= 20V,VDS=0
VGS(off) VDS=-5.0V,ID=-1 A
Yfs VDS=-5.0V,ID=-10mA
VGS=-4.0V,ID=-10mA
RDS(on)
VGS=-10V,ID=-10mA
Ciss
Coss VDS=-5.0V,VGS=0,f=1MHZ
Crss
td(on)
tr
td(off)
VGS(on)=-4V,RG=10 ,VDD=-5V,ID=-
10mA RL=500
tf
Min Typ Max Unit
-10 A
10 A
-1.4 -1.8 -2.4 V
20 45
ms
10 15
6 10
27 pF
21 pF
3 pF
120 ns
190 ns
150 ns
180 ns
Marking
Marking
H16
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2SJ210 transistor

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