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SeCoS |
Elektronische Bauelemente
BAS16V
0.3A , 100V
Plastic-Encapsulated Transistors
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Fast switching speed
For General Purpose Switching Applications
High Conductance
SOT-563
A
B
MARKING
KAM
J
D
CF
GH
E
PACKAGE INFORMATION
Package
MPQ
SOT-563
3K
Leader Size
7 inch
REF.
A
B
C
D
E
Millimeter
Min. Max.
1.50
1.50
1.70
1.70
0.525 0.60
1.10 1.30
- 0.05
REF.
F
G
H
J
Millimeter
Min. Max.
0.09 0.16
0.45 0.55
0.17 0.27
0.10 0.30
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Non-Repetitive Peak reverse voltage
VRM
Maximum Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
VRRM
VRWM
Maximum DC Blocking Voltage
RMS Reverse Voltage
VR
VR(RMS)
Peak forward Continuous current
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms Single Half t=1.0µs
Sine-Wave Super Imposed on Rated Load (JEDEC
Method)
t=1.0s
Power dissipation
Thermal Resistance Junction to Ambient
Operating Junction and storage temperature range
IFM
IF(AV)
IFSM
PD
RθJA
TJ,TSTG
Value
100
75
75
75
53
300
200
2.0
1.0
150
833
150,-65~150
Unit
V
V
V
V
V
mA
mA
A
mW
K/W
°C
http://www.SeCoSGmbH.com/
21-Jul-2011 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 2
Elektronische Bauelemente
BAS16V
0.3A , 100V
Plastic-Encapsulated Transistors
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Reverse Breakdown Voltage
V(BR)R 75 -
-
Forward Voltage
VF1 - - 0.715
VF2 - - 0.855
VF3 - - 1
VF4 - - 1.25
Reverse Voltage Leakage Current
IR1
IR2
- -1
- - 0.025
Diode Capacitance
CD - - 2.0
Reverse Recovery Time
TRR - - 4.0
RATINGS AND CHARACTERISTIC CURVES
Unit
V
V
µA
pF
nS
Test Condition
IR=100µA
IF=1mA
IF=10mA
IF=50mA
IF=150mA
VR=75V
VR=20V
VR=0 , f=1MHz
IF=IR=10mA,
IRR=0.1 x IR, RL=100Ω
http://www.SeCoSGmbH.com/
21-Jul-2011 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 2
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