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Microsemi |
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
Features
• Specified @ 12.5 V, 470 MHz Characteristics
• Output Power = 1.5 W
• Minimum Gain = 11 dB
• Efficiency 60% (Typ)
• Cost Effective PowerMacro Package
• Electroless Tin Plated Leads for Improved Solderability
DESCRIPTION: Designed primarily for wideband large signal stages in
the UHF frequency range.
MRF555
Power Macro
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC Collector Current
Thermal Data
P
D
Total Device Dissipation @ TC = 75ºC
Derate above 75ºC
MSC1316.PDF 10-25-99
Value
16
30
3.0
500
Unit
Vdc
Vdc
Vdc
mA
3.0 Watts
40 mW/ ºC
MRF555
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
Symbol
Test Conditions
BVCEO
BVCES
BVEBO
ICES
HFE
Collector-Emitter Breakdown Voltage
(IC = 5 mAdc, IB = 0)
Collector-Emitter Sustaining Voltage
(IC = 5.0 mAdc, IB = 0)
Emitter-Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 15 Vdc, VBE = 0 Vdc)
DC Current Gain
(IC = 100 mA, VCE = 5.0 Vdc) Both
Min.
16
30
3.0
-
50
Value
Typ.
-
-
-
-
-
Max.
-
-
-
5
200
Unit
Vdc
Vdc
Vdc
mA
-
DYNAMIC
Symbol
Test Conditions
COB
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Min.
-
Value
Typ.
---
Max.
5.5
Unit
pF
MSC1316.PDF 10-25-99
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