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Inchange Semiconductor |
INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
BU120
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
:VCEO(SUS) = 200V(Min)
APPLICATIONS
·Designed for horizontal deflection output stage of CTV
receivers and high voltalge, fast switching and industrial
application.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Emitter Voltage
VCEO Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current-Continuous
ICM Collector Current-peak
IB Base Current-Continuous
PC
Collector Power Dissipation
@TC=25℃
Tj Junction Temperature
Tstg Storage Temperature Range
400 V
200 V
7V
10 A
15 A
3.0 A
100
200
-65~200
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.75 ℃/W
isc website:www.iscsemi.cn
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INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
BU120
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 8A ;IB= 2.5A
VBE(sat) Base-Emitter Saturation Voltage
IC= 8A ;IB= 2.5A
ICBO Collector Cutoff Current
VCB= 400V; IE= 0
IEBO Emitter Cutoff Current
VEB= 7V; IC= 0
hFE DC Current Gain
IC= 1A; VCE= 10V
fT
Current-Gain—Bandwidth Product
IC= 1A; VCE= 10V;ftest= 1MHz
MIN MAX UNIT
200 V
400 V
3.3 V
2.2 V
0.1 mA
0.1 mA
30 120
6 MHz
isc website:www.iscsemi.cn
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